SI4162DY-T1-GE3 Vishay, SI4162DY-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI4162DY-T1-GE3
• Description: N-CHANNEL 30-V (D-S) MOSFET
• Manufacturer: Vishay

Specifications of SI4162DY-T1-GE3

• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0079 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 70 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 13.6 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 6.5mohm
• Rds(on) Test Voltage Vgs: 10V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOIC
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si4162DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
- 0.4
- 0.7
- 1.0
- 0.1
0.01
100
0.5
0.2
0.1
10
- 50
1
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
T
SD
J
0
= 150 °C
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
T
J
25
- Temperature (°C)
0.6
50
75
I
D
0.8
Limited by R
= 250 µA
0.01
100
0.1
T
100
10
J
1
0.1
= - 50 °C
T
1.0
I
J
D
Safe Operating Area, Junction-to-Ambient
* V
= 25 °C
Single Pulse
125
= 5 mA
T
DS(on)
A
GS
= 25 °C
> minimum V
1.2
150
V
*
DS
- Drain-to-Source Voltage (V)
1
GS
BVDSS Limited
at which R
0.030
0.025
0.020
0.015
0.010
0.005
0.000
10
DS(on)
100
80
60
40
20
0
0
0
0 .
is specified
0
On-Resistance vs. Gate-to-Source Voltage
1
Single Pulse Power (Junction-to-Ambient)
10 µs
100 µs
1 ms
10 ms
100 ms
1s
10 s
100 s, DC
1
2
V
100
0.01
GS
- Gate-to-Source Voltage (V)
3
4
Time (s)
0.1
5
S-82621-Rev. A, 03-Nov-08
Document Number: 68967
6
T
T
J
J
7
= 125 °C
= 25 °C
1
8
9
10
1
0