SI4162DY-T1-GE3 Vishay, SI4162DY-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI4162DY-T1-GE3
• Description: N-CHANNEL 30-V (D-S) MOSFET
• Manufacturer: Vishay

Specifications of SI4162DY-T1-GE3

• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0079 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 70 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 13.6 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 6.5mohm
• Rds(on) Test Voltage Vgs: 10V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOIC
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 68967
S-82621-Rev. A, 03-Nov-08
0.012
0.010
0.008
0.006
0.004
0.002
10
70
60
50
40
30
20
10
8
6
4
2
0
0
On-Resistance vs. Drain Current and Gate Voltage
0.0
0
0
I
D
= 20 A
10
V
0.5
DS
5
Output Characteristics
Q
20
V
V
- Drain-to-Source Voltage (V)
g
GS
GS
I
D
V
- Total Gate Charge (nC)
DS
- Drain Current (A)
Gate Charge
= 4.5 V
= 10 V
= 7.5 V
30
V
V
1.0
GS
10
DS
= 10 thru 4 V
= 15 V
40
V
DS
V
= 22.5 V
GS
50
1.5
15
= 3 V
60
2.0
20
70
1500
1200
900
600
300
1.0
0.8
0.6
0.4
0.2
0.0
1.7
1.5
1.3
1.1
0.9
0.7
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
C
rss
- 25
I
D
0.5
= 20 A
6
V
V
DS
GS
Transfer Characteristics
T
0
C
J
C
iss
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
oss
1.0
T
C
25
Capacitance
= 125 °C
12
T
1.5
C
50
T
Vishay Siliconix
= - 55 °C
C
V
= 25 °C
GS
18
75
= 10 V
Si4162DY
2.0
www.vishay.com
100
V
24
GS
2.5
125
= 4.5 V
150
3.0
30
3