SI4162DY-T1-GE3 Vishay, SI4162DY-T1-GE3 Datasheet - Page 3
![N-CHANNEL 30-V (D-S) MOSFET](/photos/15/83/158327/soic-8_sml.jpg)
SI4162DY-T1-GE3
Manufacturer Part Number
SI4162DY-T1-GE3
Description
N-CHANNEL 30-V (D-S) MOSFET
Manufacturer
Vishay
Datasheet
1.SI4162DY-T1-GE3.pdf
(7 pages)
Specifications of SI4162DY-T1-GE3
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0079 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
70 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
13.6 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Drain Source Voltage Vds
30V
On Resistance Rds(on)
6.5mohm
Rds(on) Test Voltage Vgs
10V
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
SOIC
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4162DY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 68967
S-82621-Rev. A, 03-Nov-08
0.012
0.010
0.008
0.006
0.004
0.002
10
70
60
50
40
30
20
10
8
6
4
2
0
0
On-Resistance vs. Drain Current and Gate Voltage
0.0
0
0
I
D
= 20 A
10
V
0.5
DS
5
Output Characteristics
Q
20
V
V
- Drain-to-Source Voltage (V)
g
GS
GS
I
D
V
- Total Gate Charge (nC)
DS
- Drain Current (A)
Gate Charge
= 4.5 V
= 10 V
= 7.5 V
30
V
V
1.0
GS
10
DS
= 10 thru 4 V
= 15 V
40
V
DS
V
= 22.5 V
GS
50
1.5
15
= 3 V
60
2.0
20
70
1500
1200
900
600
300
1.0
0.8
0.6
0.4
0.2
0.0
1.7
1.5
1.3
1.1
0.9
0.7
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
C
rss
- 25
I
D
0.5
= 20 A
6
V
V
DS
GS
Transfer Characteristics
T
0
C
J
C
iss
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
oss
1.0
T
C
25
Capacitance
= 125 °C
12
T
1.5
C
50
T
Vishay Siliconix
= - 55 °C
C
V
= 25 °C
GS
18
75
= 10 V
Si4162DY
2.0
www.vishay.com
100
V
24
GS
2.5
125
= 4.5 V
150
3.0
30
3