SI4100DY-T1-E3 Vishay, SI4100DY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4100DY-T1-E3
• Description: N-CHANNEL 100-V (D-S) MOSFET
• Manufacturer: Vishay

Specifications of SI4100DY-T1-E3

• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.063 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.4 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 69251
S09-0220-Rev. B, 09-Feb-09
0.20
0.16
0.12
0.08
0.04
0.00
20
16
12
10
8
4
0
8
6
4
2
0
0
0
0
I
D
= 4.4 A
On-Resistance vs. Drain Current
4
1
3
V
DS
Q
Output Characteristics
V
GS
V
g
- Drain-to-Source Voltage (V)
GS
- Total Gate Charge (nC)
I
D
= 6 V
Gate Charge
- Drain Current (A)
= 10 V thru 7 V
8
2
6
V
DS
= 50 V
12
3
9
V
GS
V
DS
= 10 V
16
12
4
= 80 V
6 V
5 V
4 V
20
15
5
1000
800
600
400
200
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
20
16
12
8
4
0
0
- 50
0
0
On-Resistance vs. Junction Temperature
- 25
V
I
D
GS
1
= 4.4 A
C
= 6 V, 10 V
oss
V
V
Transfer Characteristics
2 0
GS
DS
T
0
J
2
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
2 5
Capacitance
T
25 °C
3
C
C
= 125 °C
rss
4 0
5 0
Vishay Siliconix
C
iss
4
7 5
Si4100DY
5
100
www.vishay.com
6 0
- 55 °C
125
6
150
80
7
3