si4100dy Vishay, si4100dy Datasheet

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si4100dy

Manufacturer Part Number
si4100dy
Description
N-channel 100-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Part Number:
SI4100DY
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
si4100dy-T1-E3
Manufacturer:
STM
Quantity:
186
Part Number:
si4100dy-T1-E3
Manufacturer:
VISHAY
Quantity:
25 000
Part Number:
si4100dy-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
si4100dy-T1-GE3
Manufacturer:
TOSHIBA
Quantity:
5 600
Document Number: 69251
S-72062-Rev. A, 08-Oct-07
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 85 °C/W.
d. T
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Avalanche Current
Single Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
DS
C
100
= 25 °C.
(V)
Ordering Information: Si4100DY-T1-E3 (Lead (Pb)-free)
0.063 at V
0.084 at V
r
S
S
S
G
DS(on)
GS
1
2
3
4
GS
(Ω)
J
= 10 V
= 150 °C)
= 6 V
b, c
Top View
SO-8
N-Channel 100-V (D-S) MOSFET
I
D
6.8
5.8
(A)
8
7
6
5
Steady State
d
t ≤ 10 s
T
T
T
T
T
T
T
T
T
T
L = 0.1 mH
D
D
D
D
C
C
A
A
C
A
C
C
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C, unless otherwise noted
Q
g
9 nC
(Typ)
New Product
Symbol
R
R
thJA
thJF
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
DS
GS
D
AS
S
D
FEATURES
APPLICATIONS
stg
• TrenchFET
• 100 % UIS Tested
• High Frequency Boost Converter
• LED Backlight for LCD TV
G
Typical
N-Channel MOSFET
37
17
®
Power MOSFET
D
S
- 55 to 150
4.4
3.5
2.1
2.5
1.6
Limit
± 20
100
6.8
5.4
3.8
20
19
18
5
6
a, b
a, b
a, b
a, b
a, b
Maximum
50
21
Vishay Siliconix
Si4100DY
www.vishay.com
°C/W
Unit
RoHS
Unit
COMPLIANT
mJ
°C
W
V
A
1

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si4100dy Summary of contents

Page 1

... Top View Ordering Information: Si4100DY-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Avalanche Current Single Avalanche Energy Maximum Power Dissipation ...

Page 2

... Si4100DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Document Number: 69251 S-72062-Rev. A, 08-Oct-07 New Product 1000 800 600 400 200 Si4100DY Vishay Siliconix 125 ° ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics ...

Page 4

... Si4100DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 4.0 3.6 3.2 2.8 2.4 2 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.14 0.12 0.10 0.08 0.06 0. °C J 0.02 0.00 0.8 1.0 1 250 µA D 100 125 150 100 ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 69251 S-72062-Rev. A, 08-Oct-07 New Product 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si4100DY Vishay Siliconix ...

Page 6

... Si4100DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech- nology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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