SI3475DV-T1-GE3 Vishay
![no-image](/images/manufacturer_photos/0/6/697/vishay_sml.jpg)
SI3475DV-T1-GE3
Manufacturer Part Number
SI3475DV-T1-GE3
Description
P-CHANNEL 200-V (D-S) MOSFET
Manufacturer
Vishay
Series
TrenchFET®r
Specifications of SI3475DV-T1-GE3
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.61 Ohm @ 900mA, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
950mA
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
18nC @ 10V
Input Capacitance (ciss) @ Vds
500pF @ 50V
Power - Max
3.2W
Mounting Type
Surface Mount
Package / Case
6-TSOP (0.063", 1.60mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI3475DV-T1-GE3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI3475DV-T1-GE3
Manufacturer:
IDT
Quantity:
83