SI3475DV Vishay, SI3475DV Datasheet

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SI3475DV

Manufacturer Part Number
SI3475DV
Description
P-channel 200-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI3475DV-T1-GE3
Manufacturer:
IDT
Quantity:
83
Notes:
a. T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 sec.
d. Maximum under Steady State conditions is 110 °C/W.
Document Number: 74249
S-62239–Rev. A, 06-Nov-06
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot
PRODUCT SUMMARY
V
- 200
C
DS
= 25 °C.
(V)
Ordering Information: Si3475DV-T1-E3 (Lead (Pb)-free
1.61 at V
1.65 at V
3 mm
r
DS(on)
D
G
D
GS
GS
J
(Ω)
= - 10 V
= - 6 V
= 150 °C)
b, d
Top View
1
2
3
TSOP-6
2. 8 5 mm
P-Channel 200-V (D-S) MOSFET
6
5
4
I
- 0.95
- 0.93
D
(A)
a
D
S
D
A
New Product
Q
= 25 °C, unless otherwise noted
g
8 nC
Steady State
(Typ)
t ≤ 5 sec
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
Marking Code
AI
FEATURES
APPLICATIONS
• TrenchFET
• 100 % R
• Active Clamp Circuits in DC/DC Power Supplies
XXX
Part # Code
Symbol
R
R
thJA
thJF
Symbol
T
Lot Tracea b ility
and Date Code
J
V
V
E
I
I
P
, T
DM
I
I
AS
DS
GS
D
AS
S
D
g
stg
and UIS Tested
®
Power MOSFET
Typical
51
32
- 55 to 150
G
- 0.75
- 0.59
- 0.95
1.25
- 0.77
Limit
1.6
- 200
± 20
- 2.6
0.45
Maximum
2
3.2
2.1
P-Channel MOSFET
- 3
3
b,c
b,c
62.5
b,c
Vishay Siliconix
b,c
b,c
39
a
S
D
Si3475DV
www.vishay.com
°C/W
Unit
RoHS
COMPLIANT
Unit
mJ
°C
W
V
A
1

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SI3475DV Summary of contents

Page 1

... V GS TSOP-6 Top View Ordering Information: Si3475DV-T1-E3 (Lead (Pb)-free ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy ...

Page 2

... Si3475DV Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Gate Charge Document Number: 74249 S-62239–Rev. A, 06-Nov-06 25 °C, unless otherwise noted thru 125 V DS 7.5 10.0 12.5 Si3475DV Vishay Siliconix 1.5 1.2 0 125 ° ° ° – Gate-to-Source Voltage (V) GS Transfer Characteristics ...

Page 4

... Si3475DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.10 0.01 0 0.6 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.8 0 µA D 0.4 0.2 0.0 - 0 – Temperature (°C) J Threshold Voltage www.vishay.com 4 6.0 4.8 3 °C J 2.4 1.2 0.0 0.9 1.2 1 ...

Page 5

... Case Temperature (°C) C Current Derating* 1.5 1.2 0.9 0.6 0.3 0.0 100 125 150 0 = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dis- Si3475DV Vishay Siliconix 125 150 100 125 T – Case Temperature (°C) C Power Derating, Junction-to-Ambient www.vishay.com 150 ...

Page 6

... Si3475DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech- nology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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