SI1867DL-T1-GE3 Vishay, SI1867DL-T1-GE3 Datasheet

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SI1867DL-T1-GE3

Manufacturer Part Number
SI1867DL-T1-GE3
Description
Load Switch W/ Level Shift SC70-6 (SOT-363) 600mohm @ 10V
Manufacturer
Vishay
Series
-r
Type
High Side Switchr
Datasheet

Specifications of SI1867DL-T1-GE3

Number Of Outputs
1
Rds (on)
1.2 Ohm
Internal Switch(s)
Yes
Current Limit
600mA
Voltage - Input
1.8 V ~ 8 V
Operating Temperature
-
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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Part Number:
SI1867DL-T1-GE3
Manufacturer:
ST
0
DESCRIPTION
The Si1867DL includes a p- and n-channel MOSFET in a
single SC70-6 package. The low on-resistance p-channel
TrenchFET is tailored for use as a load switch. The
n-Channel, with an external resistor, can be used as a level-
shift to drive the P-Channel load-switch. The n-channel
MOSFET has internal ESD protection and can be driven by
logic signals as low as 1.5 V. The Si1867DL operates on
supply lines from 1.8 V to 8 V, and can drive loads up to 0.6 A.
APPLICATION CIRCUITS
* Minimum R1 value should be least 10 x R2 to ensure Q1 turn-on.
Document Number: 72534
S10-0792-Rev. D, 05-Apr-10
ON/OFF
PRODUCT SUMMARY
COMPONENTS
R1
R2
C1
V
1.8 to 8
V
DS2
R2
IN
C
R1
(V)
i
Optional Slew-Rate Control
Optional Slew-Rate Control
Pull-Up Resistor
4
6
5
0.600 at V
0.850 at V
1.200 at V
Q2
Q1
R
Si1867DL
DS(on)
1
R2
IN
IN
IN
(Ω)
= 4.5 V
= 2.5 V
= 1.8 V
2, 3
6
Load Switch with Level-Shift
Typical 10 kΩ to 1 mΩ*
C
Typical 0 to 100 kΩ*
o
C1
Typical 1000 pF
I
± 0.6
± 0.5
± 0.2
D
(A)
V
GND
LOAD
OUT
FEATURES
APPLICATIONS
The Si1867DL is ideally suited for high-side load switching in
portable applications. The integrated n-channel level-shift
devices saves space by reducing external components. The
slew rate is set externally so that rise-times can be tailored to
different load types.
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 600 mΩ Low R
• 1.8 V to 8 V Input
• 1.5 V to 8 V Logic Level Control
• Compliant to RoHS Directive 2002/95/EC
• Load Switch with Level-Shift for Portable Applications
Definition
12
10
8
6
4
2
0
0
Note: For R2 switching variations with other V
I
V
C
C
L
ON/OFF
i
o
= 1 A
= 10 µF
= 1 µF
®
R2 at V
Power MOSFET
combinations see Typical Characteristics
2
DS(on)
= 3 V
t
Switching Variation
d(on)
IN
= 2.5 V, R1 = 20 kΩ
4
R2 (kΩ)
t
d(off)
Vishay Siliconix
6
Si1867DL
8
www.vishay.com
t
t
r
f
IN
/R1
10
1

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SI1867DL-T1-GE3 Summary of contents

Page 1

... P-Channel load-switch. The n-channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5 V. The Si1867DL operates on supply lines from 1 and can drive loads up to 0.6 A. APPLICATION CIRCUITS ...

Page 2

... ON/OFF Ordering Information: Si1867DL-T1-E3 (Lead (Pb)-free) Si1867DL-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Input Voltage ON/OFF Voltage Load Current a Continuous Intrinsic Diode Conduction a Maximum Power Dissipation Operating Junction and Storage Temperature Range ESD Rating, MIL-STD-833D Human Body Model (100 pF, 1500 Ω) ...

Page 3

... DROP L Document Number: 72534 S10-0792-Rev. D, 05-Apr- 1 1.2 1.6 2 °C J 1.2 1 Si1867DL Vishay Siliconix 2 °C C 1.6 1.2 25 °C 0.8 0.4 0.0 0.0 0.5 1.0 1.5 2 Gate-to-Source Voltage (V) GS Transfer Characteristics 1 1 ON/OFF 1.2 0 125 ° 0.6 ...

Page 4

... Si1867DL Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.6 1 0.6 A 1 Junction Temperature (° Resistance vs. Junction Temperature ON/OFF µ µ d(off d(on (kΩ) Switching Variation 4 kΩ ON/OFF µ µ d(off d(on (kΩ) Switching Variation 1 kΩ ...

Page 5

... Limited * by R DS(on 100 ms 0 °C A Single Pulse 0.01 0 Drain-to-Source Voltage ( minimum V at which DS(on) Safe Operating Area, Junction-to-Ambient - Square Wave Pulse Duration (s) Si1867DL Vishay Siliconix ON/OFF µ µ d(on (kΩ) Switching Variation 1 300 kΩ IN 100 is specified Notes: P ...

Page 6

... E 1.80 2.10 E 1.15 1. 0.65BSC e 1.20 1. 0.10 0.20 L 7_Nom ECN: S-03946—Rev. B, 09-Jul-01 DWG: 5550 Vishay Siliconix Min Nom Max 1.10 0.035 – 0.043 0.10 – – 0.004 1.00 0.031 – 0.039 0.30 0.006 – 0.012 0.25 0.004 – 0.010 2 ...

Page 7

... MOSFETs in the SC-70 package. These new Vishay Siliconix devices are intended for small-signal applications where a miniaturized package is needed and low levels of current (around 250 mA) need to be switched, either directly or by using a level shift configuration. Vishay provides these devices with a range of on-resistance specifications in 6-pin versions. The new ...

Page 8

... This fact confirms that the power dissipation is restricted with the package size and the Alloy 42 leadframe. ASSOCIATED DOCUMENT 518_C/W Single-Channel LITTLE FOOT SC-70 6-Pin MOSFET Copper Leadframe Version, REcommended Pad Pattern and Thermal 413_C/W Performance, AN815, (http://www.vishay.com/doc?71334). Dual EVB 1” Square FR4 PCB - ...

Page 9

... Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead Return to Index Return to Index www.vishay.com 18 0.067 (1.702) 0.016 0.026 0.010 (0.406) (0.648) (0.241) Recommended Minimum Pads Dimensions in Inches/(mm) Document Number: 72602 Revision: 21-Jan-08 ...

Page 10

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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