si1867dl Vishay, si1867dl Datasheet

no-image

si1867dl

Manufacturer Part Number
si1867dl
Description
Load Switch With Level-shift
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
si1867dl-T1-E3
Manufacturer:
VISHAY
Quantity:
180
Part Number:
si1867dl-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
si1867dl-T1-GE3
Manufacturer:
ST
0
DESCRIPTION
The Si1867DL includes a p- and n-channel MOSFET in a
single SC70-6 package. The low on-resistance p-channel
TrenchFET is tailored for use as a load switch. The n-channel,
with an external resistor, can be used as a level-shift to drive
Document Number: 72534
S-32132—Rev. A, 27-Oct-03
PRODUCT SUMMARY
APPLICATION CIRCUITS
COMPONENTS
*Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on.
ON/OFF
R1
R2
C1
V
1.8 to 8
DS2
V
R2
IN
(V)
C
R1
Optional Slew-Rate Control
Optional Slew-Rate Control
i
Pull-Up Resistor
4
6
5
Si1867DL
Q2
Q1
0.600 @ V
0.850 @ V
1.200 @ V
r
DS(on)
1
R2
IN
IN
IN
(W)
= 4.5 V
= 2.5 V
= 1.8 V
Load Switch with Level-Shift
2, 3
6
Typical 10 kW to 1 mW*
Typical 0 to 100 kW*
C
Typical 1000 pF
o
C1
I
New Product
V
GND
D
"0.6
"0.5
"0.4
LOAD
OUT
(A)
the p-channel load-switch.
internal ESD protection and can be driven by logic signals as
low as 1.5-V. The Si1867DL operates on supply lines from 1.8
to 8 V, and can drive loads up to 0.6 A.
The Si1867DL is ideally suited for high-side load switching in
portable applications. The integrated n-channel level-shift
device saves space by reducing external components. The
slew rate is set externally so that rise-times can be tailored to
different load types.
12
10
8
6
4
2
0
0
Note: For R2 switching variations with other V
I
V
C
C
L
ON/OFF
i
o
= 1 A
FEATURES
D TrenchFETr Power MOSFET
D Lead Free
D 600-mW Low r
D 1.8- to 8-V Input
D 1.5- to 8-V Logic Level Control
D Lead Free
APPLICATIONS
D Load Switch with Level-Shift for Portable
= 10 mF
= 1 mF
Applications
combinations See Typical Characteristics
R2 @ V
2
= 3 V
Switching Variation
t
d(on)
IN
4
= 2.5 V, R1 = 20 kW
R2 (kW)
DS(on)
The n-channel MOSFET has
6
t
d(off)
Vishay Siliconix
8
Si1867DL
t
t
r
f
IN
/R1
www.vishay.com
10
1

Related parts for si1867dl

si1867dl Summary of contents

Page 1

... Document Number: 72534 S-32132—Rev. A, 27-Oct-03 New Product I (A) D "0.6 "0.5 "0.4 the p-channel load-switch. internal ESD protection and can be driven by logic signals as low as 1.5-V. The Si1867DL operates on supply lines from 1 and can drive loads OUT LOAD ...

Page 2

... FUNCTIONAL BLOCK DIAGRAM SC70-6 Top View Ordering Information: Si1867DL-T1-E3 ABSOLUTE MAXIMUM RATINGS (T Parameter Input Voltage ON/OFF Voltage Load Current Load Current a Continuous Intrinsic Diode Conduction a Maximum Power Dissipation Operating Junction and Storage Temperature Range ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500 W) ...

Page 3

... ON/OFF 2.0 1 125_C J 1.0 0.5 0.0 0.0 0.4 0.8 I ï (A) L Document Number: 72534 S-32132—Rev. A, 27-Oct-03 New Product 1 4 1.6 2 25_C J 1.2 1.6 Si1867DL Vishay Siliconix Transfer Characteristics 2 ï55_C 1.6 C 1.2 25_C 0.8 0.4 0.0 0.0 0.5 1.0 1.5 V ï Gate-to-Source Voltage ( vs 4.5 V DROP ON/OFF 1.2 0 125_C J 0 ...

Page 4

... Si1867DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 1.6 1 1 0.6 ï50 ï ï Junction Temperature (_C) J Switching Variation 4 ON/OFF ...

Page 5

... T = 25_C A Single Pulse 0.01 0 ï Drain-to-Source Voltage (V) DS ï2 ï Square Wave Pulse Duration (sec) Si1867DL Vishay Siliconix Switching Variation 1 300 ON/OFF ...

Related keywords