MUN5237DW1T1G ON Semiconductor, MUN5237DW1T1G Datasheet - Page 3

• Manufacturer Part Number: MUN5237DW1T1G
• Description: Pre-Biased "Digital" Transistor,50V V(BR)CEO,100mA I(C),SOT-363
• Manufacturer: ON Semiconductor

Specifications of MUN5237DW1T1G

• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 4)
Collector-Base Cutoff Current (V
Collector-Emitter Cutoff Current (V
Emitter-Base Cutoff Current
Collector-Base Breakdown Voltage (I
Collector-Emitter Breakdown Voltage (Note 3) (I
DC Current Gain
(V
(V
EB
CE
= 6.0 V, I
= 10 V, I
C
C
= 5.0 mA)
= 0)
Characteristic
CB
CE
= 50 V, I
C
= 50 V, I
= 10 mA, I
(T
A
E
= 25°C unless otherwise noted, common for Q
= 0)
B
C
= 0)
E
MUN5211DW1T1, G
MUN5212DW1T1, G
MUN5213DW1T1, G
MUN5214DW1T1, G
MUN5215DW1T1, G
MUN5216DW1T1, G
MUN5230DW1T1, G
MUN5231DW1T1, G
MUN5232DW1T1, G
MUN5233DW1T1, G
MUN5234DW1T1, G
MUN5235DW1T1, G
MUN5236DW1T1, G
MUN5237DW1T1, G
MUN5211DW1T1, G
MUN5212DW1T1, G
MUN5213DW1T1, G
MUN5214DW1T1, G
MUN5215DW1T1, G
MUN5216DW1T1, G
MUN5230DW1T1, G
MUN5231DW1T1, G
MUN5232DW1T1, G
MUN5233DW1T1, G
MUN5234DW1T1, G
MUN5235DW1T1, G
MUN5236DW1T1, G
MUN5237DW1T1, G
MUN5211DW1T1 Series
= 2.0 mA, I
= 0)
http://onsemi.com
B
= 0)
3
V
V
Symbol
(BR)CBO
(BR)CEO
I
I
I
h
CBO
CEO
EBO
FE
1
and Q
Min
160
160
3.0
8.0
50
50
35
60
80
80
15
80
80
80
80
80
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
2
)
Typ
100
140
140
350
350
200
150
140
150
140
5.0
60
15
30
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max
0.18
0.13
0.05
0.13
100
500
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.2
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
mAdc
nAdc
nAdc
Unit
Vdc
Vdc