MUN5237DW1T1G ON Semiconductor, MUN5237DW1T1G Datasheet

MUN5237DW1T1G

Manufacturer Part Number

MUN5237DW1T1G

Description

Pre-Biased "Digital" Transistor,50V V(BR)CEO,100mA I(C),SOT-363

Manufacturer

ON Semiconductor

Datasheets

1.MUN5237DW1T1G.pdf (21 pages)

2.MUN5237DW1T1G.pdf (12 pages)

Specifications of MUN5237DW1T1G

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MUN5237DW1T1G

Manufacturer:

ON Semiconductor

Quantity:

500

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MUN5237DW1T1G

Manufacturer:

Quantity:

30 000

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MUN5211DW1T1 Series

Dual Bias Resistor

Transistors

NPN Silicon Surface Mount Transistors

with Monolithic Bias Resistor Network

a monolithic bias network consisting of two resistors; a series base

resistor and a base−emitter resistor. These digital transistors are

designed to replace a single device and its external resistor bias

network. The BRT eliminates these individual components by

integrating them into a single device. In the MUN5211DW1T1 series,

two BRT devices are housed in the SOT−363 package which is ideal

for low power surface mount applications where board space is at a

premium.

Features

•

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. FR−4 @ Minimum Pad

2. FR−4 @ 1.0 x 1.0 inch Pad

MAXIMUM RATINGS

December, 2005 − Rev. 7

THERMAL CHARACTERISTICS

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

Total Device Dissipation

Derate above 25°C

Thermal Resistance,

Total Device Dissipation

Derate above 25°C

Thermal Resistance,

Junction and Storage Temperature

The BRT (Bias Resistor Transistor) contains a single transistor with

Simplifies Circuit Design

Reduces Board Space

Reduces Component Count

Pb−Free Packages are Available

= 25°C unless otherwise noted, common for Q

Junction-to-Ambient

Junction-to-Lead

(Both Junctions Heated)

= 25°C

(One Junction Heated)

Characteristic

Rating

Preferred Devices

Symbol

, T

CBO

CEO

qJA

qJL

stg

and Q

187 (Note 1)

256 (Note 2)

670 (Note 1)

490 (Note 2)

250 (Note 1)

385 (Note 2)

493 (Note 1)

325 (Note 2)

188 (Note 1)

208 (Note 2)

1.5 (Note 1)

2.0 (Note 2)

2.0 (Note 1)

3.0 (Note 2)

−55 to +150

Value

Max

100

)

mW/°C

mAdc

°C/W

Unit

Vdc

°C

See specific marking information in the device marking table

on page 2 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

DEVICE MARKING INFORMATION

(Note: Microdot may be in either location)

*Date Code orientation and/or position may

vary depending upon manufacturing location.

(4)

(3)

MARKING DIAGRAM

= Device Code

= Date Code*

= Pb−Free Package

http://onsemi.com

CASE 419B

SOT−363

STYLE 1

(5)

xx M G

Publication Order Number:

(2)

MUN5211DW1T1/D

(1)

(6)

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