MG800J2YS50A Powerex Inc, MG800J2YS50A Datasheet - Page 5

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MG800J2YS50A

Manufacturer Part Number
MG800J2YS50A
Description
TRANSISTOR,IGBT POWER MODULE,HALF BRIDGE,600V V(BR)CES,800A I(C)
Manufacturer
Powerex Inc
Series
IGBTMOD™r
Type
IGBT Moduler
Datasheet

Specifications of MG800J2YS50A

Rohs Compliant
YES
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
3V @ 15V, 800A
Current - Collector (ic) (max)
800A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
93nF @ 10V
Power - Max
2900W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
Module
Prx Availability
RequestQuote
Voltage
600V
Current
800A
Circuit Configuration
Dual
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
BG2B-5015 - KIT DEV BOARD 2CN 5A FOR IGBTBG2B-3015 - KIT DEV BOARD 2CN 3A FOR IGBTBG2B-1515 - KIT DEV BOARD 1.5A FOR IGBTBG2A-NF - KIT DEV BOARD FOR IGBT
Igbt Type
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MG800J2YS50A
Manufacturer:
TOSHIBA
Quantity:
28
Part Number:
MG800J2YS50A
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Part Number:
MG800J2YS50A
Quantity:
60
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
MG800J2YS50A
Dual IGBTMOD™
Compact IGBT Series Module
800 Amperes/600 Volts
7/05
10
10
10
10
10
10
10
10
10
2
1
0
4
3
2
2
1
0
0
2
0
V
V
di/dt = 2000A/µs
CC
GE
COLLECTOR CURRENT, I
4
REVERSE RECOVERY LOSS VS.
FORWARD CURRENT, I
= 300V
= -10V
SWITCHING LOSS (OFF) VS.
T
T
SWITCHING LOSS (ON) VS.
j
j
200
COLLECTOR CURRENT
= 25°C
= 125°C
GATE RESISTANCE, R
FORWARD CURRENT
GATE RESISTANCE
6
300
(TYPICAL )
(TYPICAL)
(TYPICAL)
8
400
10
V
V
R
V
V
I
F
600
C
C
CC
GE
G
, (AMPERES)
CC
GE
, (AMPERES)
= 800A
G
= 4.7Ω
12
, ( Ω )
= 300V
= ±15V
600
= 300V
= ±15V
T
T
T
T
j
j
j
j
= 25°C
= 125°C
= 25°C
= 125°C
14
900
800
16
10
10
10
10
10
10
10
10
10
10
10
2
1
0
3
2
1
6
5
4
3
2
0
0
0
0
COLLECTOR-EMITTER VOLTAGE, V
V
V
R
V
f = 1MHz
T
CC
GE
G
j
GE
COLLECTOR-EMITTER VOLTAGE
REVERSE RECOVERY CURRENT
= 25°C
COLLECTOR CURRENT, I
= 4.7Ω
FORWARD CURRENT, I
= 300V
= ±15V
= 0V
T
T
SWITCHING LOSS (ON) VS.
j
j
200
10
COLLECTOR CURRENT
= 25°C
= 125°C
0
CAPACITANCE VS.
300
(TYPICAL)
(TYPICAL)
(TYPICAL)
400
10
1
V
V
di/dt = 2000A/µs
F
600
C
, (AMPERES)
CC
GE
, (AMPERES)
600
= 300V
= ±15V
10
T
T
C
C
C
CE
j
j
oes
res
ies
= 25°C
= 125°C
2
, (VOLTS)
900
800
10
3
10
10
10
10
10
10
10
10
10
10
10
4
3
2
3
2
1
4
3
2
1
0
2
0
0
COLLECTOR-EMITTER VOLTAGE, V
V
R
T
j
GE
G
≤ 125°C
4
= 4.7Ω
FORWARD CURRENT, I
= ±15V
SWITCHING LOSS (OFF) VS.
REVERSE RECOVERY TIME
SAFE OPERATION AREA
200
200
GATE RESISTANCE, R
GATE RESISTANCE
6
REVERSE BIAS
(TYPICAL)
(TYPICAL)
(TYPICAL)
8
400
400
10
V
V
di/dt = 2000A/µs
V
V
I
F
C
CC
GE
, (AMPERES)
CC
GE
= 800A
G
12
, ( Ω )
= 300V
= ±15V
600
= 300V
= ±15V
600
T
T
T
T
CE
j
j
j
j
= 25°C
= 125°C
= 25°C
= 125°C
, (VOLTS)
14
800
800
16
5

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