MG800J2YS50A Powerex Inc, MG800J2YS50A Datasheet - Page 2

• Manufacturer Part Number: MG800J2YS50A
• Description: TRANSISTOR,IGBT POWER MODULE,HALF BRIDGE,600V V(BR)CES,800A I(C)
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r
• Type: IGBT Moduler

Specifications of MG800J2YS50A

• Rohs Compliant: YES
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 800A
• Current - Collector (ic) (max): 800A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 93nF @ 10V
• Power - Max: 2900W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Module
• Prx Availability: RequestQuote
• Voltage: 600V
• Current: 800A
• Circuit Configuration: Dual
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: BG2B-5015 - KIT DEV BOARD 2CN 5A FOR IGBTBG2B-3015 - KIT DEV BOARD 2CN 3A FOR IGBTBG2B-1515 - KIT DEV BOARD 1.5A FOR IGBTBG2A-NF - KIT DEV BOARD FOR IGBT
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
MG800J2YS50A
Dual IGBTMOD™
Compact IGBT Series Module
800 Amperes/600 Volts
Absolute Maximum Ratings, T
Characteristics
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current (DC)
Forward Current (DC)
Collector Dissipation (T
Power Device Junction Temperature
Storage Temperature
Mounting Torque, M5 Mounting Screws
Mounting Torque, M8 Main Terminal Screws
Module Weight (Typical)
Isolation Voltage, AC 1 minute, 60Hz Sinusoidal
Electrical and Mechanical Characteristics, T
Characteristics
Gate Leakage Current
Collector Cutoff Current
Gate-Emitter Cutoff Voltage
Collector-Emitter Saturation Voltage
Input Capacitance
Gate-Emitter Voltage
Gate Resistance
Inductive Load
Switching
Times
Forward Voltage
Reverse Recovery Time
Junction to Case Thermal Resistance
RTC Operating Current
C
= 25°C)
j
= 25°C unless otherwise specified
R
V
R
V
Symbol
GE(off)
CE(sat)
t
t
th(j-c)Q
th(j-c)D
I
I
C
V
d(on)
d(off)
GES
CES
R
t
t
V
I
t
rtc
GE
on
off
t
t
ies
rr
r
G
f
F
j
= 25°C unless otherwise specified
I
F
= 800A, V
I
V
I
F
V
F
V
GE
GE
= 800A, V
CE
= 800A, V
= 15V, I
V
V
V
V
FWDi (Per 1/2 Module)
= 15V, I
IGBT (Per 1/2 Module)
I
= 10V, V
GE
C
CC
GE
CE
= 800mA,V
Test Conditions
GE
= ±15V, R
= 300V, I
= ±20V, V
= 600V, V
GE
T
C
GE
= -10V, di/dt = 2000A/µs
C
j
GE
= 800A, T
= 25°C
= 800A, T
= -10V, T
= -10V, T
= 0V, f = 1MHz
C
CE
G
GE
CE
= 800A,
= 4.7Ω
= 5V
= 0V
= 0V
j
j
Symbol
j
j
V
V
= 125°C
= 125°C
V
= 25°C
T
= 25°C
GES
P
CES
—
—
—
I
I
T
ISO
stg
C
F
C
j
1600
Min.
13.0
5.0
4.7
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
MG800J2YS50A
-20 to 150
-40 to 125
2900
2500
600
±20
800
800
680
93000
27
88
15.0
0.25
0.55
0.85
0.15
1.05
Typ.
6.5
2.4
2.6
0.3
2.3
2.1
—
—
—
—
—
—
—
0.043
0.056
Max.
17.0
15.0
±10
1.0
8.0
3.0
3.3
0.3
3.0
0.5
—
—
—
—
—
—
—
—
Amperes
Amperes
Grams
Amperes
Watts
Units
Volts
Volts
Volts
°C/Watt
°C/Watt
in-lb
in-lb
°C
°C
Units
Volts
Volts
Volts
Volts
Volts
Volts
mA
µA
pF
µs
µs
µs
µs
µs
µs
µs
Ω
7/05