IRLR8203 International Rectifier, IRLR8203 Datasheet - Page 4

MOSFET

IRLR8203

Manufacturer Part Number
IRLR8203
Description
MOSFET
Manufacturer
International Rectifier
Datasheets

Specifications of IRLR8203

Thermal Resistance
1.09°C/W
Gate-to-drain Charge
17nC
Mounting Type
Through Hole
Peak Reflow Compatible (260 C)
No
Drain Source On Resistance @ 10v
6.8mohm
Current Rating
110A
Drain Source On Resistance @ 4.5v
9mohm
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

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IRLR/U8203
10000
4
1000
100
1000
100
0.1
10
Fig 5. Typical Capacitance Vs.
1
Fig 7. Typical Source-Drain Diode
1
0.2
Drain-to-Source Voltage

T = 175
J
V DS , Drain-to-Source Voltage (V)
V
0.4
SD
Forward Voltage
,Source-to-Drain Voltage (V)
°
C
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
0.6

Coss
Crss
10
T = 25
0.8
Ciss
J
f = 1 MHZ
°
1.0
C

V
GS
SHORTED
1.2
= 0 V
100
1.4
1000
100
Fig 8. Maximum Safe Operating Area
10
6
5
4
3
2
1
0
1
0

Fig 6. Typical Gate Charge Vs.
I
D
0
Tc = 25°C
Tj = 175°C
Single Pulse
=
12A
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
Q , Total Gate Charge (nC)
G
10
1
OPERATION IN THIS AREA
LIMITED BY R DS (on)

V
V
V
DS
DS
DS
20
10
= 24V
= 15V
= 6V
www.irf.com
10msec
100µsec
1msec
100
30
1000
40

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