IRLR8203 International Rectifier, IRLR8203 Datasheet

MOSFET

IRLR8203

Manufacturer Part Number
IRLR8203
Description
MOSFET
Manufacturer
International Rectifier
Datasheets

Specifications of IRLR8203

Thermal Resistance
1.09°C/W
Gate-to-drain Charge
17nC
Mounting Type
Through Hole
Peak Reflow Compatible (260 C)
No
Drain Source On Resistance @ 10v
6.8mohm
Current Rating
110A
Drain Source On Resistance @ 4.5v
9mohm
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

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Benefits
l
l
l
Absolute Maximum Ratings
l
l
Thermal Resistance
www.irf.com
* When mounted on 1" square PCB (FR-4 or G-10 Material) .
Applications
Notes  through
R
R
R
Symbol
V
V
I
I
I
P
P
T
D
D
DM
J
DS
GS
D
D
and Current
@ T
@ T
JC
JA
JA
, T
for Telecom and Industrial Use
Ultra-Low Gate Impedance
Very Low RDS(on) at 4.5V V
Fully Characterized Avalanche Voltage
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
High Frequency Buck Converters for
@T
@T
For recommended footprint and soldering techniques refer to application note #AN-994
Computer Processor Power
STG
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
Drain-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Junction and Storage Temperature Range
Linear Derating Factor
Gate-to-Source Voltage
are on page 10
Parameter
Parameter
GS

SMPS MOSFET
GS
GS
ƒ
ƒ
@ 10V
@ 10V
V
30V
DSS
Typ.
–––
–––
–––
HEXFET
-55 to + 175
R
IRLR8203
DS(on)
Max.
± 20
110
0.92
120
140
D-Pak
76
30
69
6.8m
®
IRLR8203
IRLU8203
Power MOSFET
Max.
1.09
max
110
50
IRLU8203
I-Pak
PD - 94404
110A
W/°C
Units
Units
°C/W
°C
I
W
W
V
A
V
D
1
03/12/02

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