HSMS-286C-TR1 Avago Technologies US Inc., HSMS-286C-TR1 Datasheet - Page 5

• Manufacturer Part Number: HSMS-286C-TR1
• Description: DETECTOR DIODE,SOT-323
• Manufacturer: Avago Technologies US Inc.

Specifications of HSMS-286C-TR1

• Rohs Compliant: NO
• Diode Type: Schottky - 1 Pair Series Connection
• Voltage - Peak Reverse (max): 4V
• Capacitance @ Vr, F: 0.25pF @ 0V, 1MHz
• Package / Case: SC-70-3, SOT-323-3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Max: -
• Power Dissipation (max): -
• Resistance @ If, F: -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Typical Parameters, Single Diode
Figure 4. +25°C Expanded Output
Voltage vs. Input Power. See Figure 3.
Figure 1. Forward Current vs.
Forward Voltage at Temperature.
100
.01
0.3
10
30
10
.1
1
1
0.1 0.2 0.3 0.4
-50
R
L
FORWARD VOLTAGE (V)
= 100 KΩ
2.45 GHz
DIODES TESTED IN FIXED-TUNED
FR4 MICROSTRIP CIRCUITS.
POWER IN (dBm)
0.5
-40
T
T
T
0.6
915 MHz
5.8 GHz
A
A
A
= –55°C
= +25°C
= +85°C
0.7
0.8 0.9
-30
1.0
10,000
1000
Figure 5. Dynamic Transfer
Characteristic as a Function of DC Bias.
Figure 2. Forward Voltage Match.
100
100
10
10
1
–40
1
0.05
–30
FORWARD VOLTAGE (V)
0.10
POWER IN (dBm)
I
F
–20
Frequency = 2.45 GHz
Fixed-tuned FR4 circuit
R
(left scale)
L
0.15
= 100 KΩ
∆V
–10
F
(right scale)
0.20
20 µA
5 µA
0
0.25
10
10
1
10 µA
10000
Figure 3. +25°C Output Voltage vs.
Input Power, 3 µA Bias.
1000
Figure 6. Voltage Sensitivity as a
Function of DC Bias Current.
100
0.1
40
35
30
25
20
15
10
10
5
5
1
-50
.1
R
L
= 100 KΩ
Input Power =
Data taken in fixed-tuned
R
-40
L
–30 dBm @ 2.45 GHz
FR4 circuit
915 MHz
DIODES TESTED IN FIXED-TUNED
FR4 MICROSTRIP CIRCUITS.
= 100 KΩ
BIAS CURRENT (µA)
POWER IN (dBm)
1
-30
2.45 GHz
5.8 GHz
-20
10
-10
100
0