GA200TS60UPBF Vishay, GA200TS60UPBF Datasheet - Page 7

• Manufacturer Part Number: GA200TS60UPBF
• Description: TRANSISTOR,IGBT POWER MODULE,HALF BRIDGE,600V V(BR)CES,265A I(C)
• Manufacturer: Vishay

Specifications of GA200TS60UPBF

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 600 V
• Continuous Collector Current At 25 C: 265 A
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: INT-A-PAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ORDERING INFORMATION TABLE
CIRCUIT CONFIGURATION
Document Number: 94545
Revision: 04-May-10
Dimensions
50V
Fig. 16 - Clamped Inductive Load Test Circuit
6000µF
100V
Device code
1000V
L
1
2
3
4
5
6
7
V * c
3
For technical questions, contact:
GA
1
"Half-Bridge" IGBT INT-A-PAK
(Ultrafast Speed IGBT), 200 A
-
-
-
-
-
-
-
200
D.U.T.
LINKS TO RELATED DOCUMENTS
2
Essential part number IGBT modules
Current rating (200 = 200 A)
Circuit configuration (T = Half bridge)
INT-A-PAK
Voltage code (60 = 600 V)
Speed/type (U = Ultrafast IGBT)
PbF = Lead (Pb)-free
S1
6
T
3
7
S
4
1
[e-mail]
60
5
S2
4
Fig. 17 - Pulsed Collector Current Test Circuit
U
6
0 - 480V
www.vishay.com/doc?95173
Vishay High Power Products
PbF
5
7
2
GA200TS60UPbF
R
L
=
4 X I
480V
C
@25°C
www.vishay.com
7