GA200TS60UPBF Vishay, GA200TS60UPBF Datasheet - Page 5

• Manufacturer Part Number: GA200TS60UPBF
• Description: TRANSISTOR,IGBT POWER MODULE,HALF BRIDGE,600V V(BR)CES,265A I(C)
• Manufacturer: Vishay

Specifications of GA200TS60UPBF

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 600 V
• Continuous Collector Current At 25 C: 265 A
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: INT-A-PAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 94545
Revision: 04-May-10
20000
15000
10000
5000
1000
100
10
Fig. 11 - Typical Forward Voltage Drop vs.
0
Fig. 12 - Typical Stored Charge vs. dI
500
1.0
Instantaneous Forward Current
400 A, 125 °C
V
2.0
FM
- Forward Voltage Drop (V)
1000
dI
200 A, 125 °C
F/
3.0
100 A, 125 °C
dt (A/µs)
400 A, 25 °C
T = 25 °C
4.0
T = 125 °C
J
J
200 A, 25 °C
1500
100 A, 25 °C
For technical questions, contact:
5.
"Half-Bridge" IGBT INT-A-PAK
(Ultrafast Speed IGBT), 200 A
6.0
2000
F
/dt
[e-mail]
Fig. 13 - Typical Reverse Recovery Time vs. dI
20000
15000
10000
5000
250
200
150
100
Fig. 14 - Typical Reverse Recovery vs. dI
50
0
0
500
500
Vishay High Power Products
400 A, 125 °C
200 A, 125 °C
100 A, 125 °C
400 A, 125 °C
1000
1000
dI
200 A, 125 °C
F/
dI
GA200TS60UPbF
100 A, 125 °C
dt (A/µs)
F/
400 A, 25 °C
dt (A/µs)
200 A, 25 °C
1500
1500
100 A, 2 5°C
400 A, 25 °C
200 A, 25 °C
100 A, 25 °C
2000
2000
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F
/dt
F
/dt
5