BLF6G10LS-260PRN:1 NXP Semiconductors, BLF6G10LS-260PRN:1 Datasheet - Page 3

• Manufacturer Part Number: BLF6G10LS-260PRN:1
• Description: BLF6G10LS-260PRN/LDMOST/TUBE-B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-260PRN:1

• Transistor Type: LDMOS
• Frequency: 917.5MHz ~ 962.5MHz
• Gain: 22dB
• Voltage - Rated: 65V
• Current Rating: 64A
• Current - Test: 1.8A
• Voltage - Test: 28V
• Power - Output: 40W
• Package / Case: SOT539B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
4. Limiting values
5. Thermal characteristics
6. Characteristics
7. Application information
BLF6G10L-260PRN_LS-260PRN
Product data sheet
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
Table 6.
T
Table 7.
Class-AB production test circuit; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test model 1;
1 to 64 DPCH; f
V
Symbol
V
V
I
T
Symbol
R
Symbol Parameter
V
V
V
I
I
I
g
R
Symbol
P
G
T
D
DSS
DSX
GSS
j
DS
fs
stg
j
DS
GS
(BR)DSS
GS(th)
GSq
L(AV)
th(j-case)
DS(on)
p
= 25
= 28 V; I
°
C; values per section unless otherwise specified.
drain-source breakdown
voltage
gate-source threshold voltage
gate-source quiescent voltage V
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
Parameter
average output power
power gain
Limiting values
Thermal characteristics
Characteristics
2-carrier W-CDMA Application information
Parameter
thermal resistance from junction to case
Dq
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
1
= 1800 mA; T
= 917.5 MHz; f
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 12 August 2010
case
2
= 25
= 922.5 MHz; f
°
C; unless otherwise specified.
Conditions
Conditions
V
V
I
V
V
V
V
V
V
I
D
D
GS
DS
DS
GS
GS
DS
GS
DS
GS
= 1000 mA
= 6.3 A
BLF6G10L(S)-260PRN
= 0 V; I
= 10 V; I
= 28 V;
= 0 V; V
= V
= 10 V
= 11 V; V
= 10 V; I
= V
3
= 957.5 MHz; f
Conditions
P
GS(th)
GS(th)
L(AV)
D
DS
Conditions
T
D
D
= 1.8 mA
+ 3.75 V;
DS
+ 3.75 V;
case
= 40 W
= 180 mA
= 9 A
= 28 V
= 0 V
= 80 °C; P
4
= 962.5 MHz; RF performance at
Power LDMOS transistor
Min
-
19.8
Min
65
1.4
1.45
-
24.1
-
7.02
0.053 0.1
L
= 40 W
-
Min
-
−0.5
-
−65
Typ
40
22.0
Typ
-
1.9
2.1
-
30
-
12
© NXP B.V. 2010. All rights reserved.
Max
65
+13
64
+150
200
Typ
0.28
Max
-
-
Max
-
2.4
2.55
2.8
-
280
-
0.165 Ω
3 of 16
Unit
K/W
Unit
V
V
A
°C
°C
W
Unit
dB
Unit
V
V
V
μA
A
nA
S