ATF-50189-TR1 Avago Technologies US Inc., ATF-50189-TR1 Datasheet - Page 18

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ATF-50189-TR1

Manufacturer Part Number
ATF-50189-TR1
Description
TRANSISTOR,HEMT,N-CHAN,7V V(BR)DSS,SOT-89
Manufacturer
Avago Technologies US Inc.
Datasheet

Specifications of ATF-50189-TR1

Rohs Compliant
YES
Transistor Type
pHEMT FET
Frequency
2GHz
Gain
15.5dB
Voltage - Rated
7V
Current Rating
1A
Noise Figure
1.1dB
Current - Test
280mA
Voltage - Test
4.5V
Power - Output
29dBm
Package / Case
SC-70-3, SOT-323-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ATF-50189-TR1
Manufacturer:
AVAGO
Quantity:
130
Part Number:
ATF-50189-TR1
Manufacturer:
AVAGO/安华高
Quantity:
20 000
Part Number:
ATF-50189-TR1G
Manufacturer:
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Quantity:
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18
ATF-50189 Typical Scattering Parameters at 25°C, V
Freq.
GHz
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2
2.1
2.2
2.3
2.4
2.5
3
3.5
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
Figure 38. MSG/MAG & |S21|
at 3.5V/200 mA.
-10
-20
-30
40
30
20
10
0
0
MSG
2
Mag.
0.927
0.922
0.921
0.919
0.918
0.919
0.919
0.920
0.922
0.923
0.924
0.924
0.924
0.921
0.920
0.923
0.922
0.922
0.921
0.921
0.919
0.920
0.918
0.914
0.910
0.909
0.912
0.923
0.922
0.921
0.921
0.922
0.923
0.922
0.921
0.924
0.923
0.922
0.925
0.925
0.924
0.924
4
FREQUENCY (GHz)
S
6
11
MAG
S21
Ang.
-132.6
-158.4
-169.2
-176.0
178.6
174.6
171.0
167.6
164.2
161.1
159.7
158.2
155.5
152.6
150.2
147.6
144.7
142.1
139.6
137.1
134.6
132.0
129.7
127.1
125.0
112.7
99.5
92.6
78.2
61.3
41.2
24.3
11.8
10.8
0.3
-8.0
-12.1
-20.6
-23.6
-23.1
-24.3
-32.5
8
10
12
2
14
vs Frequency
dB
30.4
25.0
21.6
19.2
17.2
15.6
14.4
13.3
12.4
11.5
11.2
10.8
10.0
9.4
8.7
8.1
7.6
7.0
6.5
6.0
5.5
5.1
4.6
4.2
3.8
1.8
0.0
-1.2
-4.0
-6.2
-8.7
-10.6
-12.8
-15.1
-16.1
-17.9
-19.2
-20.8
-20.8
-20.6
-18.4
-16.5
16
18
Mag.
33.278
17.839
12.071
9.101
7.208
6.036
5.237
4.637
4.159
3.778
3.617
3.455
3.171
2.936
2.734
2.554
2.395
2.248
2.116
1.994
1.889
1.792
1.690
1.618
1.549
1.226
1.000
0.869
0.633
0.488
0.369
0.294
0.230
0.176
0.156
0.128
0.110
0.091
0.091
0.093
0.120
0.150
S
21
Notes:
1. S parameter is measured on a microstrip line
made on 0.025 inch thick alumina carrier. The
input reference plane is at the end of the gate
lead. The output reference plane is at the end
of the drain lead.
Ang.
111.3
97.4
90.7
86.0
84.6
82.0
79.5
76.9
74.1
71.4
70.0
68.5
65.6
62.8
60.1
57.2
54.4
51.8
49.2
46.5
44.0
41.3
38.8
36.4
34.1
22.1
12.5
2.9
-18.0
-39.4
-57.1
-76.8
-97.3
-105.0
-120.3
-132.2
-146.9
-161.8
-177.7
168.1
156.0
132.5
DS
= 3.5V, I
dB
-37.1
-35.9
-35.4
-34.9
-34.9
-34.4
-33.6
-33.2
-32.4
-32.0
-31.7
-31.4
-31.1
-30.5
-30.2
-29.9
-29.4
-29.1
-28.9
-28.4
-28.2
-28.0
-27.7
-27.5
-27.3
-26.6
-26.0
-25.7
-25.0
-25.5
-26.0
-26.7
-28.4
-31.1
-34.4
-44.4
-39.2
-36.5
-38.4
-37.7
-41.9
-34.9
DS
Mag.
0.014
0.016
0.017
0.018
0.018
0.019
0.021
0.022
0.024
0.025
0.026
0.027
0.028
0.030
0.031
0.032
0.034
0.035
0.036
0.038
0.039
0.040
0.041
0.042
0.043
0.047
0.050
0.052
0.056
0.053
0.050
0.046
0.038
0.028
0.019
0.006
0.011
0.015
0.012
0.013
0.008
0.018
S
= 200 mA
12
Ang.
30.8
23.7
23.1
24.1
28.0
30.1
32.0
33.1
34.0
34.4
34.4
34.4
34.1
33.6
33.3
32.5
31.7
30.8
29.7
28.7
27.4
26.3
25.1
23.8
22.8
16.3
10.7
5.2
-7.1
-24.3
-41.5
-58.0
-75.9
-84.6
-113.3
-164.6
75.2
34.4
-0.7
-7.2
-177.4
158.2
Mag.
0.713
0.762
0.773
0.778
0.779
0.779
0.778
0.779
0.778
0.778
0.777
0.778
0.777
0.777
0.775
0.792
0.790
0.796
0.801
0.812
0.823
0.822
0.921
0.881
0.885
0.868
0.867
0.857
0.776
0.780
0.779
0.780
0.778
0.779
0.779
0.779
0.778
0.854
0.890
0.901
0.877
0.833
S
22
Ang.
-163.4
-173.1
-177.6
179.3
175.7
173.5
171.4
169.4
167.4
165.6
164.7
163.7
161.9
160.0
158.2
156.5
154.6
153.1
151.4
149.7
148.0
146.4
145.1
143.5
141.8
135.0
131.2
122.7
102.1
84.0
69.2
53.9
36.3
26.6
19.8
6.7
-1.4
-7.8
-19.5
-26.6
-34.0
-42.9
MSG/MAG
dB
33.8
30.5
28.5
27.0
26.0
25.0
24.0
23.2
22.4
21.8
21.4
21.1
20.5
19.9
19.5
19.0
18.1
17.2
16.5
15.9
15.3
14.8
14.3
13.7
13.3
11.3
9.8
9.1
6.7
5.0
2.9
1.9
1.2
-0.3
-1.7
-1.2
-4.2
-6.0
-6.5
-6.4
-4.2
-2.5

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