ATF-50189-TR1 Avago Technologies US Inc., ATF-50189-TR1 Datasheet - Page 15

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ATF-50189-TR1

Manufacturer Part Number
ATF-50189-TR1
Description
TRANSISTOR,HEMT,N-CHAN,7V V(BR)DSS,SOT-89
Manufacturer
Avago Technologies US Inc.
Datasheet

Specifications of ATF-50189-TR1

Rohs Compliant
YES
Transistor Type
pHEMT FET
Frequency
2GHz
Gain
15.5dB
Voltage - Rated
7V
Current Rating
1A
Noise Figure
1.1dB
Current - Test
280mA
Voltage - Test
4.5V
Power - Output
29dBm
Package / Case
SC-70-3, SOT-323-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ATF-50189-TR1
Manufacturer:
AVAGO
Quantity:
130
Part Number:
ATF-50189-TR1
Manufacturer:
AVAGO/安华高
Quantity:
20 000
Part Number:
ATF-50189-TR1G
Manufacturer:
AVAGO
Quantity:
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15
ATF-50189 Typical Scattering Parameters at 25°C, V
Freq.
GHz
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2
2.1
2.2
2.3
2.4
2.5
3
3.5
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
Figure 35. MSG/MAG & |S21|
at 5.5V/200 mA.
-10
-20
-30
40
30
20
10
0
0
2
MSG
Mag.
0.922
0.917
0.916
0.914
0.912
0.913
0.915
0.916
0.918
0.918
0.919
0.920
0.920
0.917
0.917
0.919
0.918
0.919
0.918
0.918
0.917
0.918
0.913
0.912
0.908
0.907
0.912
0.923
0.922
0.921
0.921
0.922
0.923
0.922
0.921
0.924
0.923
0.922
0.925
0.925
0.924
0.924
4
FREQUENCY (GHz)
6
S
MAG
11
S21
8
Ang.
-131.5
-157.7
-168.8
-175.7
178.8
174.7
171.0
167.6
164.1
161.0
159.5
158.0
155.3
152.4
150.0
147.3
144.5
141.8
139.3
136.7
134.2
131.6
129.4
126.7
124.5
112.2
99.5
92.6
78.2
61.3
41.2
24.3
11.8
10.8
0.3
-8.0
-12.1
-20.6
-23.6
-23.1
-24.3
-32.5
10
12
2
14
vs Frequency
dB
31.3
25.9
22.5
20.1
18.1
16.5
15.3
14.2
13.3
12.4
12.1
11.7
10.9
10.2
9.6
9.0
8.5
7.9
7.4
6.8
6.4
5.9
5.4
5.0
4.6
2.5
1.4
0.1
-3.3
-5.8
-8.4
-10.5
-12.8
-14.9
-16.4
-18.4
-20.1
-22.2
-22.9
-22.4
-20.1
-18.1
16
18
Mag.
36.764
19.783
13.403
10.105
8.007
6.708
5.815
5.144
4.613
4.188
4.008
3.827
3.512
3.249
3.023
2.821
2.648
2.482
2.333
2.199
2.082
1.973
1.868
1.778
1.700
1.340
1.176
1.012
0.685
0.512
0.381
0.298
0.230
0.179
0.151
0.120
0.099
0.078
0.072
0.076
0.099
0.125
S
21
Notes:
1. S parameter is measured on a microstrip line
made on 0.025 inch thick alumina carrier. The
input reference plane is at the end of the gate
lead. The output reference plane is at the end
of the drain lead.
Ang.
111.7
97.5
90.6
85.7
84.1
81.3
78.7
75.9
72.9
70.1
68.6
67.1
64.0
61.1
58.4
55.3
52.3
49.6
46.8
44.1
41.4
38.6
35.7
33.4
31.1
18.4
7.8
-2.9
-24.1
-46.3
-64.7
-85.4
-106.7
-114.6
-132.2
-145.0
-161.7
-176.9
171.6
160.6
151.7
131.4
DS
= 5.5V, I
dB
-37.1
-36.5
-35.9
-35.4
-34.9
-34.4
-34.0
-33.6
-33.2
-32.4
-32.0
-32.0
-31.7
-31.1
-30.8
-30.5
-29.9
-29.6
-29.4
-29.1
-28.9
-28.6
-28.4
-28.2
-28.0
-27.1
-26.7
-26.6
-26.4
-26.6
-26.7
-27.3
-29.1
-31.7
-35.4
-46.0
-37.7
-35.9
-38.4
-36.5
-43.1
-36.5
DS
Mag.
0.014
0.015
0.016
0.017
0.018
0.019
0.02
0.021
0.022
0.024
0.025
0.025
0.026
0.028
0.029
0.03
0.032
0.033
0.034
0.035
0.036
0.037
0.038
0.039
0.04
0.044
0.046
0.047
0.048
0.047
0.046
0.043
0.035
0.026
0.017
0.005
0.013
0.016
0.012
0.015
0.007
0.015
S
= 200 mA
12
Ang.
30.8
23.2
22.1
22.9
26.5
28.6
30.3
31.4
32.4
32.7
32.8
32.8
32.5
32.2
31.9
31.2
30.4
29.6
28.6
27.6
26.5
25.4
24.2
23.0
22.1
15.8
9.7
3.5
-10.3
-25.6
-40.9
-56.4
-74.0
-82.1
-113.8
179.4
76.2
39.1
12.7
6.4
153.6
145.0
Mag.
0.65
0.70
0.71
0.71
0.72
0.72
0.71
0.71
0.71
0.71
0.71
0.71
0.71
0.73
0.82
0.87
0.89
0.87
0.87
0.87
0.86
0.72
0.71
0.71
0.72
0.72
0.72
0.72
0.72
0.72
0.71
0.72
0.74
0.76
0.78
0.85
0.86
0.88
0.90
0.88
0.92
0.89
S
22
Ang.
-159.4
-171.0
-176.1
-179.5
176.4
174.1
171.8
169.8
167.7
165.9
164.9
163.9
162.1
160.3
158.5
156.7
154.9
153.3
151.6
150.0
148.2
146.7
145.1
143.8
142.1
135.2
126.6
117.9
100.7
84.1
67.8
51.5
36.5
27.1
20.7
8.1
0.7
-5.0
-15.8
-21.7
-27.7
-34.6
MSG/MAG
dB
34.2
31.2
29.2
27.7
26.5
25.5
24.6
23.9
23.2
22.4
22.0
21.8
21.3
20.6
19.7
19.0
18.3
17.6
16.9
16.3
15.8
15.3
14.6
14.1
13.6
11.7
10.8
10.3
7.8
6.2
4.0
2.5
1.2
0
-1.8
-1.8
-4.9
-7.2
-8.4
-8.0
-5.5
-3.5

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