VND7NV04-E STMicroelectronics, VND7NV04-E Datasheet - Page 8

MOSFET N-CH 40V 6A DPAK

VND7NV04-E

Manufacturer Part Number
VND7NV04-E
Description
MOSFET N-CH 40V 6A DPAK
Manufacturer
STMicroelectronics
Series
OMNIFET II™r
Type
Low Sider
Datasheet

Specifications of VND7NV04-E

Transistor Polarity
N Channel
Continuous Drain Current Id
3.5A
Drain Source Voltage Vds
55V
On Resistance Rds(on)
60mohm
Rds(on) Test Voltage Vgs
5V
Operating Temperature Range
-55°C To +150°C
Threshold Voltage Vgs Typ
2.5V
Rohs Compliant
Yes
Input Type
Non-Inverting
Number Of Outputs
1
On-state Resistance
60 mOhm
Current - Output / Channel
-
Current - Peak Output
9A
Voltage - Supply
-
Operating Temperature
-
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

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Part Number
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Quantity
Price
Part Number:
VND7NV04-E
Manufacturer:
ST
0
Electrical specifications
2.2
Table 3.
1. When mounted on a standard single-sided FR4 board with 0.5 mm
2.3
Table 4.
8/37
Off
On
Dynamic (T
Symbol
V
Symbol
R
R
R
R
V
V
V
pins.
g
C
CLAMP
I
DS(on)
thj-case
thj-lead
thj-amb
I
CLTH
DSS
fs
INTH
INCL
ISS
OSS
(1)
j
Drain-source clamp
voltage
Drain-source clamp
threshold voltage
Input threshold voltage
Supply current from input
pin
Input-source clamp
voltage
Zero input voltage drain
current (V
Static drain-source on
resistance
Forward
transconductance
Output capacitance
=25 °C, unless otherwise specified)
Thermal resistance junction-case max
Thermal resistance junction-lead max
Thermal resistance junction-ambient max
Thermal data
Thermal data
Electrical characteristics
-40 °C < T
Electrical characteristics
Parameter
IN
=0 V)
j
< 150 °C, unless otherwise specified.
Parameter
V
V
V
V
I
I
V
V
V
V
V
V
IN
IN
IN
IN
DS
DS
DS
DS
IN
IN
DD
DS
=1 mA
=-1 mA
=0 V; I
=0 V; I
=5 V; I
=5 V; I
=V
=0 V; V
=13 V; V
=25 V; V
=13 V; f=1 MHz; V
=13 V; I
IN
; I
Doc ID 7383 Rev 3
D
D
D
D
D
=3.5 A
=2 mA
=3.5 A; T
=3.5 A
IN
=1 mA
D
IN
IN
Test conditions
=5 V
=3.5 A
=0 V; T
=0 V
VNN7NV04, VNS7NV04, VND7NV04, VND7NV04-1
j
=25 °C
j
=25 °C
IN
SOT-223
2
=0 V
of Cu (at least 35 µm thick) connected to all DRAIN
96
18
(1)
SO-8
90
27
(1)
Value
Min
-1.0
0.5
40
36
6
DPAK
65
2.1
(1)
Typ
100
220
6.8
45
9
IPAK
102
2.1
Max
-0.3
150
120
2.5
55
30
75
60
8
°C/W
°C/W
°C/W
Unit
Unit
µA
µA
pF
V
V
V
V
S

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