SQM40N10-30-GE3 Vishay, SQM40N10-30-GE3 Datasheet - Page 5
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SQM40N10-30-GE3
Manufacturer Part Number
SQM40N10-30-GE3
Description
MOSFET,N CH,W DIODE,100V,40A,TO-263
Manufacturer
Vishay
Datasheet
1.SQM40N10-30-GE3.pdf
(7 pages)
Specifications of SQM40N10-30-GE3
Transistor Polarity
N Channel
Continuous Drain Current Id
40A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.023ohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Power Dissipation
RoHS Compliant
Power Dissipation Pd
107W
Rohs Compliant
Yes
Lead Free Status / Rohs Status
Details
THERMAL RATINGS (T
Document Number: 64716
S10-2103-Rev. B, 27-Sep-10
0.0001
0.001
0.01
0.1
1
10
-4
10
A
-3
= 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.01
100
0.1
10
0.01
1
10
-2
* V
GS
T
Single Pulse
C
Limited by
= 25 °C
R
minimum V
V
DS(on)
0.1
DS
Square Wave Pulse Duration (s)
Safe Operating Area
- Drain-to-Source Voltage (V)
*
10
-1
GS
I
DM
at which R
1
Limited
DS(on)
BVDSS Limited
1
10
is specified
100
100 µs
1 ms
10 ms
100 ms, 1 s, 10 s, DC
10
SQM40N10-30
Vishay Siliconix
100
www.vishay.com
1000
5