SQM40N10-30-GE3 Vishay, SQM40N10-30-GE3 Datasheet - Page 5

• Manufacturer Part Number: SQM40N10-30-GE3
• Description: MOSFET,N CH,W DIODE,100V,40A,TO-263
• Manufacturer: Vishay

Specifications of SQM40N10-30-GE3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 40A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 0.023ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Power Dissipation: RoHS Compliant
• Power Dissipation Pd: 107W
• Rohs Compliant: Yes
• Lead Free Status / Rohs Status: Details

THERMAL RATINGS (T
Document Number: 64716
S10-2103-Rev. B, 27-Sep-10
0.0001
0.001
0.01
0.1
1
10
-4
10
A
-3
= 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.01
100
0.1
10
0.01
1
10
-2
* V
GS
T
Single Pulse
C
Limited by
= 25 °C
R
minimum V
V
DS(on)
0.1
DS
Square Wave Pulse Duration (s)
Safe Operating Area
- Drain-to-Source Voltage (V)
*
10
-1
GS
I
DM
at which R
1
Limited
DS(on)
BVDSS Limited
1
10
is specified
100
100 µs
1 ms
10 ms
100 ms, 1 s, 10 s, DC
10
SQM40N10-30
Vishay Siliconix
100
www.vishay.com
1000
5