SQM40N10-30-GE3 Vishay, SQM40N10-30-GE3 Datasheet - Page 4
![no-image](/images/manufacturer_photos/0/6/697/vishay_sml.jpg)
SQM40N10-30-GE3
Manufacturer Part Number
SQM40N10-30-GE3
Description
MOSFET,N CH,W DIODE,100V,40A,TO-263
Manufacturer
Vishay
Datasheet
1.SQM40N10-30-GE3.pdf
(7 pages)
Specifications of SQM40N10-30-GE3
Transistor Polarity
N Channel
Continuous Drain Current Id
40A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.023ohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Power Dissipation
RoHS Compliant
Power Dissipation Pd
107W
Rohs Compliant
Yes
Lead Free Status / Rohs Status
Details
SQM40N10-30
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
www.vishay.com
4
0.12
0.09
0.06
0.03
2.5
2.1
1.7
1.3
0.9
0.5
0
- 50
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
I
- 25
D
= 15 A
2
V
0
GS
T
J
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
25
4
50
75
V
GS
6
= 10 V
100
130
124
118
112
106
100
A
Drain Source Breakdown vs. Junction Temperature
- 50
= 25 °C, unless otherwise noted)
T
T
J
125
J
= 150 °C
= 25 °C
8
I
- 25
D
= 10 mA
150
0
T
175
10
J
- Junction Temperature (°C)
25
50
75
100
0.001
0.01
- 0.2
- 0.7
- 1.2
- 1.7
100
0.1
10
0.8
0.3
1
125
- 50
0
150
- 25
Source Drain Diode Forward Voltage
0.2
T
175
V
J
0
SD
= 150 °C
- Source-to-Drain Voltage (V)
0.4
Threshold Voltage
25
T
J
- Temperature (°C)
50
0.6
S10-2103-Rev. B, 27-Sep-10
75
Document Number: 64716
I
T
D
J
0.8
= 250 μA
100
= 25 °C
125
I
D
1.0
= 5 mA
150
1.2
175