SQD50N06-07L-GE3 Vishay, SQD50N06-07L-GE3 Datasheet - Page 5

• Manufacturer Part Number: SQD50N06-07L-GE3
• Description: MOSFET,N CH,W DIODE,60V,50A,TO-252
• Manufacturer: Vishay

Specifications of SQD50N06-07L-GE3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 50A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 0.0064ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Power Dissipation: RoHS Compliant
• Power Dissipation Pd: 136W
• Rohs Compliant: Yes

THERMAL RATINGS (T
Document Number: 69099
S10-2055-Rev. B, 27-Sep-10
0.01
0.1
2
1
10
-4
0.05
Duty Cycle = 0.5
0.02
0.1
0.2
10
Single Pulse
A
-3
= 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1000
0.01
10
100
0.1
10
-2
1
0.01
T
Single Pulse
* V
C
= 25 °C
GS
> minimum V
Square Wave Pulse Duration (s)
V
0.1
Limited by R
DS
10
Safe Operating Area
- Drain-to-Source Voltage (V)
I
D
-1
Limited
GS
I
DM
at which R
DS(on)
Limited
1
*
BVDSS Limited
DS(on)
1
10
is specified
1 ms
100 ms
100 μs
10 ms
1 s, 10 s, DC
100
10
SQD50N06-07L
Vishay Siliconix
100
www.vishay.com
1000
5