SQD50N06-07L-GE3 Vishay, SQD50N06-07L-GE3 Datasheet - Page 4

• Manufacturer Part Number: SQD50N06-07L-GE3
• Description: MOSFET,N CH,W DIODE,60V,50A,TO-252
• Manufacturer: Vishay

Specifications of SQD50N06-07L-GE3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 50A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 0.0064ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Power Dissipation: RoHS Compliant
• Power Dissipation Pd: 136W
• Rohs Compliant: Yes

SQD50N06-07L
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
www.vishay.com
4
0.001
0.01
- 0.3
- 0.7
- 1.1
- 1.5
100
0.1
0.5
0.1
10
10
8
6
4
2
0
1
- 50 - 25
0.0
0
Source Drain Diode Forward Voltage
I
V
D
0.2
DS
= 50 A
T
20
= 30 V
J
V
0
= 150 °C
SD
Q
- Source-to-Drain Voltage (V)
g
Threshold Voltage
0.4
25
T
- Total Gate Charge (nC)
J
Gate Charge
- Temperature (°C)
40
50
I
D
0.6
= 250 μA
75
60
T
J
= 25 °C
0.8
100
A
= 25 °C, unless otherwise noted)
I
D
125
= 5 mA
80
1.0
150
100
175
1.2
0.05
0.04
0.03
0.02
0.01
0.00
2.3
2.0
1.7
1.4
1.1
0.8
0.5
80
76
72
68
64
60
- 50 - 25
- 50 - 25
Drain Source Breakdown vs. Junction Temperature
0
I
D
I
D
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
= 10 mA
= 20 A
2
0
V
0
T
GS
T
J
J
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
25
25
4
V
50
50
GS
T
= 10 V
S10-2055-Rev. B, 27-Sep-10
J
= 25 °C
75
75
Document Number: 69099
6
100
100
T
J
V
= 150 °C
125
125
GS
8
= 4.5 V
150
150
175
175
10