SQD40N04-10A-GE3 Vishay, SQD40N04-10A-GE3 Datasheet - Page 5

• Manufacturer Part Number: SQD40N04-10A-GE3
• Description: MOSFET,N CH,W DIODE,40V,42A,TO-252
• Manufacturer: Vishay

Specifications of SQD40N04-10A-GE3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 42A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 0.006ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Power Dissipation: RoHS Compliant
• Power Dissipation Pd: 71W
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.01 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 40 A
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

THERMAL RATINGS (T
Document Number: 68847
S10-1684-Rev. A, 02-Aug-10
0.01
0.1
2
1
10
-4
0.05
Duty Cycle = 0.5
0.02
0.1
0.2
10
Single Pulse
A
-3
= 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.01
10
100
0.1
10
-2
1
0.01
Single Pulse
T
* V
C
GS
= 25 °C
Limited by R
> minimum V
Square Wave Pulse Duration (s)
V
0.1
DS
10
- Drain-to-Source Voltage (V)
Safe Operating Area
-1
DS(on)
I
DM
GS
Limited
I
*
at which R
D
Limited
1
BVDSS Limited
DS(on)
1
10
is specified
100 μs
1 ms
10 ms
100 ms
1 s, 10 s, DC
100
10
SQD40N04-10A
Vishay Siliconix
100
www.vishay.com
1000
5