SQD40N04-10A-GE3 Vishay, SQD40N04-10A-GE3 Datasheet - Page 4

• Manufacturer Part Number: SQD40N04-10A-GE3
• Description: MOSFET,N CH,W DIODE,40V,42A,TO-252
• Manufacturer: Vishay

Specifications of SQD40N04-10A-GE3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 42A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 0.006ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Power Dissipation: RoHS Compliant
• Power Dissipation Pd: 71W
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.01 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 40 A
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

SQD40N04-10A
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
www.vishay.com
4
0.001
0.01
2.1
1.8
1.5
1.2
0.9
0.6
100
0.1
10
- 50
1
0
On-Resistance vs. Junction Temperature
I
- 25
D
Source Drain Diode Forward Voltage
T
= 30 A
J
0.2
= 150 °C
V
0
T
SD
J
- Junction Temperature (°C)
- Source-to-Drain Voltage (V)
0.4
25
50
0.6
75
V
T
- 0.3
- 0.7
- 1.1
- 1.5
GS
J
100
0.8
A
0.5
0.1
= 25 °C
- 50
= 25 °C, unless otherwise noted)
= 10 V
125
- 25
1.0
150
0
175
1.2
Threshold Voltage
T
25
J
- Temperature (°C)
50
75
I
D
= 250 μA
100
0.05
0.04
0.03
0.02
0.01
55
52
49
46
43
40
Drain Source Breakdown vs. Junction Temperature
125
0
- 50
0
I
D
On-Resistance vs. Gate-to-Source Voltage
= 5 mA
150
- 25
175
2
0
V
T
GS
J
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
25
4
50
T
J
= 25 °C
S10-1684-Rev. A, 02-Aug-10
75
Document Number: 68847
6
100
T
J
I
= 150 °C
D
125
= 10 mA
8
150
175
10