SQD23N06-31L-GE3 Vishay, SQD23N06-31L-GE3 Datasheet - Page 5

• Manufacturer Part Number: SQD23N06-31L-GE3
• Description: MOSFET,N CH,W DIODE,60V,23A,TO-252
• Manufacturer: Vishay

Specifications of SQD23N06-31L-GE3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 23A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 0.024ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 60V
• Power Dissipation: RoHS Compliant
• Power Dissipation Pd: 37W
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.031 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 23 A
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

THERMAL RATINGS (T
Document Number: 68869
S10-1998-Rev. A, 20-Sep-10
0.01
0.1
2
1
10
-4
0.05
Duty Cycle = 0.5
0.02
0.1
0.2
10
Single Pulse
A
-3
= 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1000
0.01
100
0.1
10
10
1
0.01
-2
* V
GS
T
Single Pulse
C
= 25 °C
minimum V
V
0.1
Square Wave Pulse Duration (s)
DS
Safe Operating Area
- Drain-to-Source Voltage (V)
10
Limited by
R
-1
DS(on)
I
GS
DM
*
at which R
Limited
1
BVDSS Limited
DS(on)
1
10
is specified
100
1 ms
10 ms
100 ms, 1 s, 10 s, DC
100 µs
10
SQD23N06-31L
Vishay Siliconix
100
www.vishay.com
1000
5