SQD23N06-31L-GE3 Vishay, SQD23N06-31L-GE3 Datasheet - Page 3

• Manufacturer Part Number: SQD23N06-31L-GE3
• Description: MOSFET,N CH,W DIODE,60V,23A,TO-252
• Manufacturer: Vishay

Specifications of SQD23N06-31L-GE3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 23A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 0.024ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 60V
• Power Dissipation: RoHS Compliant
• Power Dissipation Pd: 37W
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.031 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 23 A
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

TYPICAL CHARACTERISTICS (T
Document Number: 68869
S10-1998-Rev. A, 20-Sep-10
1000
800
600
400
200
50
40
30
20
10
40
32
24
16
0
0
8
0
0
0
0
C
rss
T
C
10
= - 55 °C
2
5
V
V
V
T
DS
Output Characteristics
C
DS
GS
C
iss
- Drain-to-Source Voltage (V)
= 125 °C
- Drain-to-Source Voltage (V)
V
Transconductance
= 10 V thru 6 V
20
I
GS
D
Capacitance
C
- Drain Current (A)
= 5 V
10
4
oss
30
T
V
C
GS
= 25 °C
= 4 V
15
6
40
A
V
= 25 °C, unless otherwise noted)
GS
= 3 V
20
8
50
10
60
25
0.15
0.12
0.09
0.06
0.03
10
10
8
6
4
2
0
0
8
6
4
2
0
0
0
0
T
C
T
I
D
= 125 °C
2
C
= 23 A
= 25 °C
On-Resistance vs. Drain Current
10
2
4
V
GS
Transfer Characteristics
Q
V
- Gate-to-Source Voltage (V)
g
6
GS
I
- Total Gate Charge (nC)
D
= 4.5 V
- Drain Current (A)
V
20
Gate Charge
T
4
DS
8
C
SQD23N06-31L
= - 55 °C
= 30 V
10
Vishay Siliconix
30
12
6
14
V
GS
www.vishay.com
40
16
8
= 10 V
18
10
50
20
3