IXFN55N50F IXYS RF, IXFN55N50F Datasheet - Page 2

• Manufacturer Part Number: IXFN55N50F
• Description: MOSFET, N, RF, SOT-227B
• Manufacturer: IXYS RF

Specifications of IXFN55N50F

• Transistor Type: RF MOSFET
• Drain Source Voltage Vds: 500V
• Continuous Drain Current Id: 55A
• Power Dissipation Max: 600W
• Operating Temperature Range: -55°C To +150°C
• Rf Transistor Case: SOT-227B
• No. Of Pins: 4
• Package / Case: ISOTOP
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
IXYS reserves the right to change limits, test conditions, and dimensions.
RM
d(on)
d(off)
S
SM
r
f
rr
fs
oss
thJC
SD
iss
rss
g(on)
gs
gd
thCK
RM
Test Conditions
V
Test Conditions
V
Repetitive;
pulse width limited by T
I
Pulse test, t 300 s, duty cycle d 2 %
I
F
F
GS
DS
= I
= 50A, -di/dt = 100 A/ s, V
= 10 V; I
S
= 0 V
V
V
R
V
, V
GS
GS
GS
G
GS
= 1
= 0 V, V
= 10 V, V
= 10 V, V
= 0 V,
D
= 0.5 • I
(External),
DS
DS
DS
= 25 V, f = 1 MHz
= 0.5 • V
= 0.5 • V
D25
, pulse test
JM
R
DSS
DSS
= 100 V
(T
(T
, I
, I
D
D
J
J
= 25 C, unless otherwise specified)
= 25 C, unless otherwise specified)
= 0.5 • I
= 0.5 • I
D25
D25
min.
22
min.
Characteristic Values
Characteristic Values
6700
1250
typ.
typ.
1.6
0.05
195
13
330
9.6
33
24
20
45
50
95
0.21
max.
max.
220
250
1.5
55
K/W
K/W
nC
nC
nC
pF
pF
pF
n s
n s
n s
n s
ns
C
S
A
A
V
A
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
31.50
14.91
30.12
38.00
11.68
12.60
25.15
26.54
24.59
-0.05
7.80
4.09
4.09
4.09
8.92
0.76
1.98
4.95
3.94
4.72
Min.
Millimeter
IXFN 55N50F
31.88
15.11
30.30
38.23
12.22
12.85
25.42
26.90
25.07
Max.
8.20
4.29
4.29
4.29
9.60
0.84
2.13
5.97
4.42
4.85
0.1
-0.002
1.240
0.307
0.161
0.161
0.161
0.587
1.186
1.496
0.460
0.351
0.030
0.496
0.990
0.078
0.195
1.045
0.155
0.186
0.968
Min.
Inches
1.255
0.323
0.169
0.169
0.169
0.595
1.193
1.505
0.481
0.378
0.033
0.506
1.001
0.084
0.235
1.059
0.174
0.191
0.987
0.004
Max.