IXFK24N100F IXYS RF, IXFK24N100F Datasheet - Page 4
IXFK24N100F
Manufacturer Part Number
IXFK24N100F
Description
MOSFET, N, RF, TO-264
Manufacturer
IXYS RF
Datasheet
1.IXFK24N100F.pdf
(4 pages)
Specifications of IXFK24N100F
Transistor Type
RF MOSFET
Drain Source Voltage Vds
1kV
Continuous Drain Current Id
24A
Power Dissipation Max
560W
Operating Temperature Range
-55°C To +150°C
Rf Transistor Case
TO-264
No. Of Pins
3
Package / Case
TO-264
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFK24N100F
Manufacturer:
IXYS
Quantity:
200
Fig. 9. Source Current vs. Source to Drain Voltage
Fig. 7. Gate Charge Characteristic Curve
0.001
15
10
50
45
40
35
30
25
20
15
10
0.01
5
0
5
0
0.1
0.2
0
1
10
-4
V
DS
50
I
D
= 500V
0.4
= 12A
Gate Charge - nC
100
T
J
= 125
V
0.6
SD
150
O
- Volts
C
10
-3
0.8
200
Fig. 10. Thermal Impedence
T
J
250
1.0
= 25
O
IXF_24N100F-P2
C
300
1.2
Pulse Width - Seconds
10
-2
5000
2500
1000
500
250
100
0
10
-1
Fig. 8. Capacitance Curves
5
10
Single Pulse
Coss
Ciss
Crss
15
V
DS
- Volts
20
10
0
25
IXFK 24N100F
IXFX 24N100F
f = 1MHz
30
35
40
10
1