IGB15N60T Infineon Technologies, IGB15N60T Datasheet
IGB15N60T
Specifications of IGB15N60T
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IGB15N60T Summary of contents
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... TrenchStop ® technology CE(sat) 1 for target applications http://www.infineon.com/igbt Marking Code CE(sat),Tj=25°C j,max 1.5V G15T60 175 C Symbol V I jmax C I jmax 600V, T 175 IGB15N60T Series G PG-TO263-3-2 Package PG-TO263-3-2 Value 600 130 -40...+175 j -55...+175 245 Rev. 2.4 Oct Unit ...
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... Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors ® TrenchStop Series Symbol Conditions 6cm² Symbol Conditions . 0µ IGB15N60T q Max. Value Unit 1.15 K/W 40 Value Unit min. Typ. max. 600 - - V - 1.5 2.05 - 1.9 - 4.1 4.9 5.7 µ 1000 - - 100 Ω - 860 - 137 Rev. 2.4 Oct. 07 ...
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... Energy losses include E “tail” and diode reverse recovery =175 C j Symbol Conditions Energy losses include E “tail” and diode reverse recovery IGB15N60T q Value Unit min. Typ. max 188 - - 0. 0. 0.57 - Value Unit min. Typ. max 212 - - 0. 0. 0.81 - Rev. 2.4 Oct. 07 ...
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... C) j Power Semiconductors ® TrenchStop 10A 1A 0.1A 10kHz 100kHz 1V Figure 2. Safe operating area = 400V 30A 20A 10A 0A 25°C Figure 4. Collector current as a function of 4 IGB15N60T Series t =2µs p 10µs 50µs 1ms DC 10ms 10V 100V 1000V COLLECTOR EMITTER VOLTAGE 175 C; ...
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... TrenchStop Series 40A 35A V GE 30A 25A 20A 15A 10A Figure 6. Typical output characteristic 2.5V 2.0V 1.5V 1.0V 0.5V 0.0V 0° Figure 8. Typical collector-emitter 5 IGB15N60T =20V 15V 13V 11V COLLECTOR EMITTER VOLTAGE (T = 175° 50°C 100°C 150° JUNCTION TEMPERATURE ...
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... Figure 10. Typical switching times 15Ω d(off in -50°C Figure 12. Gate-emitter threshold voltage as = 400V, =15Ω IGB15N60T d(on GATE RESISTOR G function of gate resistor (inductive load 175° 400V 0/15V 15A Dynamic test circuit in Figure E) m ax. typ. 0°C 50°C 100° ...
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... A Figure 14. Typical switching energy losses = 175°C, = 15Ω, G 1.2m J 1.0m J 0.8m J 0.6m J 0.4m J 0.2m J 0.0m J 300V Figure 16. Typical switching energy losses = 400V, = 15Ω IGB15N60T Series *) E and E include losses on ts due to diode recovery E off GATE RESISTOR function of gate resistor (inductive load 175° ...
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... GE 12µs 10µs 8µs 6µs 4µs 2µs 0µs 10V 11V 18V V GE Figure 20. Short circuit withstand time as a function of gate-emitter voltage ( Jmax 8 IGB15N60T 20V 30V 40V 50V - EMITTER VOLTAGE =0V MHz) 12V 13V 14V , - GATE EMITETR VOLTAGE =600V, start at T =25°C, J <150°C) Rev ...
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... K/W 0.34701 R 1 0.05 0.02 C 0.01 single pulse -2 10 K/W 1µs 10µs 100µs 1ms t , PULSE WIDTH P Figure 21. IGBT transient thermal resistance ( Power Semiconductors ® TrenchStop , ( 5.67*10 -2 1.558*10 -3 2.147*10 -4 2.724* 10ms 100ms 9 IGB15N60T Series Rev. 2.4 Oct ...
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... Power Semiconductors ® TrenchStop Series PG-TO263-3-2 10 IGB15N60T q Rev. 2.4 Oct. 07 ...
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... Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors ® TrenchStop Series i Figure C. Definition of diodes switching characteristics ( Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Stray capacity C 11 IGB15N60T =60nH =40pF. Rev. 2.4 Oct. 07 ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors ® TrenchStop Series 12 IGB15N60T q Rev. 2.4 Oct. 07 ...