ES1CL Taiwan Semiconductor, ES1CL Datasheet - Page 2

• Manufacturer Part Number: ES1CL
• Description: DIODE, ULTRA-FAST SMF 1A 150V
• Manufacturer: Taiwan Semiconductor

Specifications of ES1CL

• Diode Type: Fast Recovery
• Repetitive Reverse Voltage Vrrm Max: 150V
• Forward Current If(av): 1A
• Forward Voltage Vf Max: 950mV
• Reverse Recovery Time Trr Max: 35ns
• Forward Surge Current Ifsm Max: 30A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

14
8.0
4.0
2.0
5.0
6.0
1.2
1.0
0.8
0.2
12
0.6
0.4
30
15
10
25
10
20
0
0
1
0
FIG.1- MAXIMUM FORWARD CURRENT DERATING
80
FIG.3- MAXIMUM NON-REPETITIVE PEAK FORWARD
FIG.4- TYPICAL JUNCTION CAPACITANCE
RESISTIVE OR
INDUCTIVE LOAD
0.2X0.2"(5.0X5.0mm)
COPPER PAD AREAS
CURVE
SURGE CURRENT
90
50
NONINDUCTIVE
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
(+)
50Vdc
(approx)
(-)
NOTES: 1. Rise Time=7ns max. Input Impedance=
RATINGS AND CHARACTERISTIC CURVES (ES1AL THRU ES1JL)
NUMBER OF CYCLES AT 60Hz
100
LEAD TEMPERATURE. ( C)
2. Rise Time=10ns max. Sourse Impedance=
1
REVERSE VOLTAGE. (V)
1 megohm 22pf
50 ohms
NON
INDUCTIVE
DUT
110
10
NONINDUCTIVE
10
120
OSCILLOSCOPE
(NOTE 1)
8.3ms Single Half Sine Wave
(JEDEC Method) at T =120 C
o
10
130
Tj=25 C
f=1.0MHz
Vsig=50mVp-p
0
140
PULSE
GENERATOR
(NOTE 2)
L
o
(-)
(+)
150
100
100
+0.5A
-0.25A
-1.0A
0
FIG.5- TYPICAL REVERSE CHARACTERISTICS
1000
0.01
0.01
100
50
0.1
10
10
0.1
1
1
0
FIG.2- TYPICAL INSTANTANEOUS
0.4
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
trr
Tj=25 C
PULSE WIDTH-300 S
1% DUTY CYCLE
1cm
0.6
20
FORWARD CHARACTERISTICS
0
SET TIME BASE FOR
5/ 10ns/ cm
0.8
FORWARD VOLTAGE. (V)
40
Tj=85 C
1.0
60
Tj=125 C
0
1.2
Tj=25 C
0
80
0
1.4
100
Version: A06
1.6
120
140
1.8