DE275X2-102N06A IXYS RF, DE275X2-102N06A Datasheet - Page 4

• Manufacturer Part Number: DE275X2-102N06A
• Description: MOSFET, N, RF, DE275X2
• Manufacturer: IXYS RF

Specifications of DE275X2-102N06A

• Transistor Type: RF MOSFET
• Drain Source Voltage Vds: 1kV
• Continuous Drain Current Id: 16A
• Power Dissipation Max: 1.18kW
• Operating Temperature Range: -55°C To +175°C
• Rf Transistor Case: DE275X2
• No. Of Pins: 8
• Package / Case: DE-275X2
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

102N06A DE-SERIES SPICE Model
The DE-SERIES SPICE Model is illustrated in Figure 1. The model is an expansion of the SPICE level 3
MOSFET model. It includes the stray inductive terms L
is the resistive leakage term. The output capacitance, C
modeled with reversed biased diodes. This provides a varactor type response necessary for a high
power device model. The turn on delay and the turn off delay are adjusted via Ron and Roff.
This SPICE model may be downloaded as a text file from the DEI web site at
www.directedenergy.com/spice.htm
Net List:
*SYM=POWMOSN
.SUBCKT 102N06A 10 20 30
*
* 1000 Volt 6 Amp 1.6 Ohm N-Channel Power MOSFET
M1 1 2 3 3 DMOS L=1U W=1U
RON 5 6 .5
DON 6 2 D1
ROF 5 7 1.0
DOF 2 7 D1
D1CRS 2 8 D2
D2CRS 1 8 D2
CGS 2 3 1.9N
RD 4 1 1.6
DCOS 3 1 D3
RDS 1 3 5.0MEG
LS 3 30 .5N
LD 10 4 1N
LG 20 5 1N
.MODEL DMOS NMOS (LEVEL=3 VTO=4 KP=2.3)
.MODEL D1 D (IS=.5F CJO=10P BV=100 M=.5 VJ=.2 TT=1N)
.MODEL D2 D (IS=.5F CJO=400P BV=1000 M=.6 VJ=.6 TT=1N RS=10M)
.MODEL D3 D (IS=.5F CJO=400P BV=1000 M=.35 VJ=.6 TT=400N RS=10M)
.ENDS
TERMINALS: D G S
20 GATE
Lg
5
Doff
Figure 1 DE-SERIES SPICE Model
Don
Roff
Ron
6
7
D1crs
G
OSS
, L
D2crs
8
S
2
, and reverse transfer capacitance, C
and L
10 DRAIN
4
30 SOURCE
Ld
Rd
M3
Ls
D
. Rd is the R
Dcos
DE275X2-102N06A
RF Power MOSFET
DS(ON)
Rds
An
2401 Research Blvd., Suite 108
Fort Collins, CO USA 80526
970-493-1901 Fax: [phone]
Email: [e-mail]
Web: http://www.directedenergy.com
Doc #9200-0224 Rev 3
© 2003 IXYS RF
of the device, Rds
IXYS Company
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