BUL1102E STMicroelectronics, BUL1102E Datasheet
BUL1102E
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BUL1102E Summary of contents
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... Base Current B I Base Peak Current ( Total Dissipation at T tot T Storage Temperature stg T Max. Operating Junction Temperature j March 2003 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR INTERNAL SCHEMATIC DIAGRAM = <5 ms) p <5 ms BUL1102E TO-220 Value Unit 1100 V 450 -65 to 150 C o 150 C 1/6 ...
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... BUL1102E THERMAL DATA R Thermal Resistance Junction-Case thj-case ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CES Current ( Emitter Cut-off Current EBO ( Collector-Emitter CEO(sus) Sustaining Voltage ( Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter BE(sat) Saturation Voltage h DC Current Gain FE RESISTIVE LOAD t Storage Time s t Fall Time ...
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... DC Current Gain Collector Emitter Saturation Voltage Switching Time Resistive Load DC Current Gain Base Emitter Saturation Voltage Switching Time Inductive Load BUL1102E 3/6 ...
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... BUL1102E Reverse Biased SOA Figure 1: Energy Rating Test Circuit Figure 2: Resistive Load Switching Test Circuit 4/6 ...
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... BUL1102E inch TYP. MAX. 0.181 0.052 0.107 0.027 0.034 0.067 0.067 0.202 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.102 ...
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... BUL1102E Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...