BUK6E4R0-75C NXP Semiconductors, BUK6E4R0-75C Datasheet - Page 4

• Manufacturer Part Number: BUK6E4R0-75C
• Description: MOSFET,N CH,75V,120A,SOT226
• Manufacturer: NXP Semiconductors

Specifications of BUK6E4R0-75C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 120V
• On Resistance Rds(on): 3600µohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: SOT-226
• Rohs Compliant: Yes

NXP Semiconductors
BUK6E4R0-75C
Product data sheet
Fig 1.
Fig 3.
(A)
(A)
I
I
D
D
10
10
10
200
150
100
10
50
-1
3
2
1
0
10
mounting base temperature
Continuous drain current as a function of
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
-1
50
(1)
100
Limit R
1
DSon
150
= V
All information provided in this document is subject to legal disclaimers.
T
003aae374
mb
DS
(°C)
/ I
D
200
Rev. 02 — 30 August 2010
DC
10
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
50
10
BUK6E4R0-75C
10 ms
2
100 μ s
1 ms
100 ms
t
p
=10 μ s
100
N-channel TrenchMOS FET
V
DS
(V)
150
© NXP B.V. 2010. All rights reserved.
T
003aae376
mb
03aa16
(°C)
10
200
3
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