BSP318S Infineon Technologies, BSP318S Datasheet - Page 2

• Manufacturer Part Number: BSP318S
• Description: MOSFET, N, LOGIC, SOT-223
• Manufacturer: Infineon Technologies

Specifications of BSP318S

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 2.6A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 90mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature: RoHS Compliant
• Threshold Voltage Vgs Typ: 1.6V
• Rohs Compliant: Yes
• Package: SOT-223
• Vds (max): 60.0 V
• Rds (on) (max) (@10v): 90.0 mOhm
• Rds (on) (max) (@4.5v): 150.0 mOhm
• Rds (on) (max) (@2.5v): -

Electrical Characteristics, at T
Parameter
Static Characteristics
Drain- source breakdown voltage
V
Gate threshold voltage, V
I
Zero gate voltage drain current
V
V
Gate-source leakage current
V
Drain-Source on-state resistance
V
Drain-Source on-state resistance
V
1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - soldering point
(Pin 4)
SMD version, device on PCB:
@ min. footprint
@ 6 cm
D
GS
DS
DS
GS
GS
GS
= 20 µA
= 60 V, V
= 60 V, V
= 0 V, I
= 20 V, V
= 4.5 V, I
= 10 V, I
2
cooling area
D
D
= 0.25 mA
D
GS
GS
DS
= 2.6 A
= 2.6 A
= 0 V, T
= 0 V, T
= 0 V
1)
GS
j
j
= 25 °C
= 150 °C
= V
j
DS
= 25 °C, unless otherwise specified
Final data
Page 2
Symbol
V
V
I
I
R
R
Symbol
R
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
DS(on)
thJS
thJA
min.
min.
1.2
60
-
-
-
-
-
-
-
-
Values
Values
typ.
0.12
0.07
typ.
100
1.6
0.1
10
17
-
-
-
max.
max.
0.15
0.09
100
100
70
1999-10-28
2
1
-
BSP318S
-
-
Unit
V
µA
nA
Unit
K/W