BSP296L6327 Infineon Technologies, BSP296L6327 Datasheet - Page 2

• Manufacturer Part Number: BSP296L6327
• Description: MOSFET, N, LOGIC, REEL 1K
• Manufacturer: Infineon Technologies

Specifications of BSP296L6327

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 1A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 800mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature: RoHS Compliant
• Threshold Voltage Vgs Typ: 1.4V
• Rohs Compliant: Yes

1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Electrical Characteristics, at T
Parameter
Static Characteristics
Drain-source breakdown voltage
V
Gate threshold voltage, V
I
Zero gate voltage drain current
V
V
Gate-source leakage current
V
Drain-source on-state resistance
V
Drain-source on-state resistance
V
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - soldering point
(Pin 4)
SMD version, device on PCB:
@ min. footprint
@ 6 cm
D
GS
DS
DS
GS
GS
GS
=400µA
=100V, V
=100V, V
=0, I
=20V, V
=4.5V, I
=10V, I
2
D
cooling area
=250µA
D
D
DS
=1.1A
GS
GS
=0.95A
=0
=0, T
=0, T
j
j
=25°C
=150°C
1)
GS
= V
j
DS
= 25 °C, unless otherwise specified
Rev. 1.3
Page 2
Symbol
V
V
I
I
R
R
Symbol
R
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
DS(on)
thJS
thJA
min.
min.
100
0.8
-
-
-
-
-
-
-
-
Values
Values
0.62
0.43
typ.
typ.
1.4
10
-
-
-
-
-
-
max.
max.
115
100
1.8
0.1
0.7
50
70
25
2005-11-23
1
-
BSP296
Unit
V
µA
nA
Unit
K/W