BLF645 NXP Semiconductors, BLF645 Datasheet - Page 2
![LDMOS,RF,100W,HF-1300MHZ,50V](/photos/41/53/415356/sot540a_3d_sml.gif)
BLF645
Manufacturer Part Number
BLF645
Description
LDMOS,RF,100W,HF-1300MHZ,50V
Manufacturer
NXP Semiconductors
Datasheet
1.BLF645112.pdf
(13 pages)
Specifications of BLF645
Transistor Type
RF MOSFET
Drain Source Voltage Vds
65V
Continuous Drain Current Id
32A
Operating Frequency Range
108MHz To 225MHz
Rf Transistor Case
SOT-540A
No. Of Pins
4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BLF645
Manufacturer:
MICROCHIP
Quantity:
450
Company:
Part Number:
BLF645
Manufacturer:
NXP
Quantity:
81 000
Company:
Part Number:
BLF645,112
Manufacturer:
EMCT
Quantity:
1 400
NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
5. Thermal characteristics
BLF645_1
Product data sheet
1.3 Applications
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
[1]
Pin
1
2
3
4
5
Type number
BLF645
Symbol
V
V
I
T
T
Symbol Parameter
R
D
stg
j
DS
GS
th(j-c)
Communication transmitter applications in the HF to 1400 MHz frequency range
Industrial applications in the HF to 1400 MHz frequency range
Connected to flange.
R
th(j-c)
is measured under RF conditions.
thermal resistance from junction to case
Pinning
Ordering information
Limiting values
Thermal characteristics
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
drain 1
drain 2
gate 1
gate2
source
Description
Package
Name
-
Rev. 01 — 27 January 2010
Description
flanged balanced LDMOST ceramic package; 2
mounting holes; 4 leads
Conditions
[1]
Conditions
T
Simplified outline
case
Broadband power LDMOS transistor
= 80 °C; P
1
3
2
4
-
-
Min
-
−0.5
−65
L
= 100 W
5
Graphic symbol
© NXP B.V. 2010. All rights reserved.
Max
65
+11
32
+150
200
BLF645
3
4
[1]
Typ
0.67 K/W
Version
SOT540A
1
2
sym117
A
Unit
V
V
°C
°C
2 of 13
5
Unit