7MBR100SB-060-50 FUJI ELECTRIC, 7MBR100SB-060-50 Datasheet - Page 10

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7MBR100SB-060-50

Manufacturer Part Number
7MBR100SB-060-50
Description
PIM 7PK IGBT MOD +I/P BR 100A 600V PT
Manufacturer
FUJI ELECTRIC
Datasheet

Specifications of 7MBR100SB-060-50

Module Configuration
Seven
Transistor Polarity
N Channel
Dc Collector Current
100A
Collector Emitter Voltage Vces
2.6V
Power Dissipation Max
400W
Collector Emitter Voltage V(br)ceo
600V
Power Dissipation Pd
200W
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
cate-
gorie
Test
s
1 Terminal Strength
2 Mounting Strength
3 Vibration
4 Shock
5 Solderability
6 Resistance to Soldering Heat
1 High Temperature Storage
2 Low Temperature Storage
3 Temperature Humidity
4 Unsaturated
5 Temperature Cycle
6 Thermal Shock
1 High temperature Reverse Bias
2 High temperature Bias
3 High temperature Reverse Bias
4 Intermitted Operating Life
(Pull test)
( for Collector-Emitter)
( for gate )
( for Cathode Anode)
(Power cycling)
( for IGBT )
Pressurized Vapor
Storage
Test items
Reliability Test Results
(Aug.-2001 edition)
Condition code B
Condition code B
Condition code A
Condition code A
Test Method 401
Test Method 402
Test Method 403
Test Method 404
Test Method 303
Test Method 302
Test Method 201
Test Method 202
Test Method 103
Test Method 103
Test Method 105
Test Method 307
Test Method 101
Test Method 101
Test Method 101
Test Method 106
EIAJ ED-4701
Test code C
Test code E
Reference
method Ⅰ
MethodⅠ
methodⅡ
norms
MS6M0880
Number
sample
of test
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
Number
sample
failure
10
H04-004-03a
of
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
16
a

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