6MBI75S-120-50 FUJI ELECTRIC, 6MBI75S-120-50 Datasheet - Page 9

• Manufacturer Part Number: 6MBI75S-120-50
• Description: 6-PACK IGBT MODULE 75A 1200V NPT
• Manufacturer: FUJI ELECTRIC

Specifications of 6MBI75S-120-50

• Module Configuration: Six
• Transistor Polarity: N Channel
• Dc Collector Current: 75A
• Collector Emitter Voltage Vces: 2.6V
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Transistor Case Style: Module
• No. Of: RoHS Compliant
• Power Dissipation Pd: 520W
• Rohs Compliant: Yes

cate-
gorie
Test
s
1 Terminal Strength
2 Mounting Strength
3 Vibration
4 Shock
5 Solderability
6 Resistance to Soldering Heat
1 High Temperature Storage
2 Low Temperature Storage
3 Temperature Humidity
4 Unsaturated
5 Temperature Cycle
6 Thermal Shock
1 High temperature Reverse Bias
2 High temperature Bias
3 High temperature Reverse Bias
4 Intermitted Operating Life
(Pull test)
( for Collector-Emitter)
( for gate )
( for Cathode Anode)
(Power cycling)
( for IGBT )
Pressurized Vapor
Storage
Test items
Reliability Test Results
(Aug.-2001 edition)
Condition code B
Condition code B
Condition code A
Condition code A
Test Method 401
Test Method 402
Test Method 403
Test Method 404
Test Method 303
Test Method 302
Test Method 201
Test Method 202
Test Method 103
Test Method 103
Test Method 105
Test Method 307
Test Method 101
Test Method 101
Test Method 101
Test Method 106
EIAJ ED-4701
Test code C
Test code E
Reference
method Ⅰ
MethodⅠ
methodⅡ
norms
MS5F 6104
Number
sample
of test
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
Number
sample
failure
of
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
H04- 004- 03a
9
14
a