2MBI200U4B-120-50 FUJI ELECTRIC, 2MBI200U4B-120-50 Datasheet - Page 11

• Manufacturer Part Number: 2MBI200U4B-120-50
• Description: DUAL IGBT MODULE 200A 1200V TRENCH
• Manufacturer: FUJI ELECTRIC

Specifications of 2MBI200U4B-120-50

• Module Configuration: Dual
• Transistor Polarity: N Channel
• Dc Collector Current: 300A
• Collector Emitter Voltage Vces: 2.25V
• Power Dissipation Max: 1.04kW
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

10000
10000
50
40
30
20
10
1000
1000
0
100
100
10
10
1
Vcc=600V, VGE=±15V, RG=3.0Ω, Tj=25
1
0
Vcc=600V, Ic=200A, VGE=±15V,
Vcc=600V, Ic=200A, VGE=±15V, Tj=125
Switching time vs. Collector current (typ.)
Switching time vs. Gate resistance (typ.)
Switching loss vs. Gate resistance (typ.)
Gate resistance : RG [ Ω ]
100
Gate resistance : RG [ Ω ]
Collector current : Ic [ A ]
10
10
ton
200
tf
Eoff
Eon
Err
ton
toff
tr
100
toff
100
Tj=25
300
tr
tf
o
o
C
C
o
C
1000
1000
400
30
25
20
15
10
500
400
300
200
100
10000
5
0
1000
+VGE=15V, -VGE <= 15V, RG >= 3.0Ω,
0
100
0
10
0
MS5F6577
Vcc=600V, VGE=±15V, RG=3.0Ω, Tj=125
0
50
Switching loss vs. Collector current (typ.)
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=3.0Ω
Reverse bias safe operating area (max.)
100
Collector-Emitter voltage : VCE [ V ]
400
100
Collector current : Ic [ A ]
Collector current : Ic [ A ]
150
200
800
200
250
1200
300
Tj <= 125
tr
300
11
H04-004-03a
Eoff(125
Eon(125
Err(125
Eoff(25
Eon(25
Err(25
ton
toff
tf
14
350
o
C
o
o
o
C)
o
o
C
C)
C)
o
C)
o
C)
C)
1600
400
400
a