2MBI200U4B-120-50 FUJI ELECTRIC, 2MBI200U4B-120-50 Datasheet - Page 10

• Manufacturer Part Number: 2MBI200U4B-120-50
• Description: DUAL IGBT MODULE 200A 1200V TRENCH
• Manufacturer: FUJI ELECTRIC

Specifications of 2MBI200U4B-120-50

• Module Configuration: Dual
• Transistor Polarity: N Channel
• Dc Collector Current: 300A
• Collector Emitter Voltage Vces: 2.25V
• Power Dissipation Max: 1.04kW
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100.0
500
400
300
200
100
10.0
500
400
300
200
100
1.0
0.1
0
0
0
0
0
Collector current vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Capacitance vs. Collector-Emitter voltage (typ.)
Collector-Emitter voltage : VCE [ V ]
Collector-Emitter voltage : VCE [ V ]
Collector-Emitter voltage : VCE [ V ]
VGE=0V, f=1MHz, Tj=25
1
1
VGE=20V
VGE=15V / chip
10
Tj=25
2
2
Tj=25
o
C / chip
15V
o
C
3
3
Tj=125
20
12V
o
o
C
C
4
4
Cies
Coes
Cres
10V
8V
30
5
5
10
500
400
300
200
100
8
6
4
2
0
0
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
0
5
0
0
Collector current vs. Collector-Emitter voltage (typ.)
MS5F6577
200
Collector-Emitter voltage : VCE [ V ]
1
10
Gate-Emitter voltage : VGE [ V ]
Vcc=600V, Ic=200A, Tj=25
Dynamic Gate charge (typ.)
Gate charge : Qg [ nC ]
400
Tj=125
Tj=25
2
VGE=20V
15
o
o
C / chip
C / chip
600
3
VCE
15V
VGE
20
o
800
C
10
H04-004-03a
Ic=400A
Ic=200A
Ic=100A
4
14
12V
10V
8V
1000
25
a
5