T2035H-6G STMicroelectronics, T2035H-6G Datasheet - Page 4

• Manufacturer Part Number: T2035H-6G
• Description: TRIAC HIGH TEMP 20A
• Manufacturer: STMicroelectronics

Specifications of T2035H-6G

• Peak Repetitive Off-state Voltage, Vdrm: 600V
• On State Rms Current It(rms): 20A
• Peak Non Rep Surge Current Itsm 50hz: 200A
• Holding Current Max Ih: 35mA
• Gate Trigger Voltage Max Vgt: 1V
• Peak Gate Power: 1W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Characteristics
4/10
Figure 3.
Figure 5.
Figure 7.
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1000
10000
100
1000
10
100
1
0
0.0
0.01
=180 °
0.5
dI/dt limitation: 50 A/µs
25
T
On-state rms current versus
ambient temperature
On-state characteristics (maximum
values)
Non-repetitive surge peak on-state
current for a sinusoidal pulse with
width t
value of I
j
=150 °C
1.0
50
0.10
1.5
p
T
j
< 10 ms and corresponding
=25 °C
2
T
2.0
t
amb
t
P
V
(ms)
75
TM
(°C)
(V)
2.5
100
1.00
3.0
3.5
Tj initial=25 °C
V
R
I
TSM
125
T0
T
D
S
I²t
j
= 19 m
CU
D²PAK
= 0.80 V
max. :
=1 cm²
4.0
10.00
150
4.5
Figure 4.
Figure 6.
Figure 8.
1.0E+02
1.0E+01
1.0E+00
2.5
2.0
1.5
1.0
0.5
0.0
1.0E-01
220
200
180
160
140
120
100
80
60
40
20
0
-40
1
1.0E-03
I
H
-20
& I
L
I
GT
Repetitive
T
1.0E-02
c
=110 °C
Variation of thermal impedance
versus pulse duration
Surge peak on-state current versus
number of cycles
Relative variation of gate trigger
current, holding current and
latching current versus junction
temperature (typical values)
0
T
Non repetitive
j
initial=25 °C
20
1.0E-01
10
Number of cycles
40
T
1.0E+00
j
60
t
(°C)
P
(s)
80
1.0E+01
100
T2035H, T2050H
100
Z
Z
th(j-a)
th(j-c)
1.0E+02
t=20ms
120
One cycle
140
1.0E+03
1000
160