AT-42000-GP4 Avago Technologies US Inc., AT-42000-GP4 Datasheet - Page 3

• Manufacturer Part Number: AT-42000-GP4
• Description: RF TRANSISTOR, NPN, 12V, 9GHZ
• Manufacturer: Avago Technologies US Inc.

Specifications of AT-42000-GP4

• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 12V
• Transition Frequency Typ Ft: 9GHz
• Power Dissipation Pd: 600mW
• Dc Collector Current: 80mA
• Dc Current Gain Hfe: 150
• No. Of Pins: 2
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.9dB ~ 3dB @ 2GHz ~ 4GHz
• Gain: 10.5dB ~ 14dB
• Power - Max: 600mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 35mA, 8V
• Current - Collector (ic) (max): 80mA
• Mounting Type: Surface Mount
• Package / Case: 12mm x 12mm x 6mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant


AT-42000 Typical Performance, T
Figure 1. Output Power and 1 dB
Compressed Gain vs. Collector
Current and Frequency. V
Figure 4. Insertion Power Gain vs.
Collector Current and Voltage.
f = 2.0 GHz.
24
20
16
12
13
12
11
10
8
4
9
8
7
0
0
G
P
1dB
1dB
10
10
20
20
I
I
C
C
(mA)
(mA)
30
30
CE
= 8 V.
40
40
2.0 GHz
4.0 GHz
2.0 GHz
4.0 GHz
50
50
10 V
6 V
4 V
A
= 25 °C
Figure 2. Output Power and 1 dB
Compressed Gain vs. Collector
Current and Voltage. f = 2.0 GHz.
Figure 5. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
V
CE
24
20
16
12
16
14
12
10
40
35
30
25
20
15
10
5
0
= 8 V, I
0
G
P
1dB
1dB
0.1
10
C
= 35 mA.
FREQUENCY (GHz)
20
0.3
I
C
0.5
(mA)
30
|S
MSG
21E
1.0
40
|
2
50
MAG
3.0
10 V
10 V
6 V
4 V
6 V
4 V
6.0
Figure 3. Insertion Power Gain vs.
Collector Current and Frequency.
V
Figure 6. Noise Figure and Associated
Gain vs. Frequency.
V
CE
CE
20
16
12
24
21
18
15
12
8
4
0
9
6
3
0
0.5
= 8 V.
= 8 V, I
0
G
A
10
C
= 10 mA.
FREQUENCY (GHz)
1.0
20
I
C
(mA)
30
2.0
40
NF
O
3.0 4.0 5.0
4.0 GHz
1.0 GHz
2.0 GHz
50
4
3
2
1
0