AT-42000-GP4 Avago Technologies US Inc., AT-42000-GP4 Datasheet

AT-42000-GP4

Manufacturer Part Number

AT-42000-GP4

Description

RF TRANSISTOR, NPN, 12V, 9GHZ

Manufacturer

Avago Technologies US Inc.

Datasheet

1.AT-42000-GP4.pdf (5 pages)

Specifications of AT-42000-GP4

Transistor Polarity

NPN

Collector Emitter Voltage V(br)ceo

12V

Transition Frequency Typ Ft

9GHz

Power Dissipation Pd

600mW

Dc Collector Current

80mA

Dc Current Gain Hfe

150

No. Of Pins

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (max)

12V

Frequency - Transition

9GHz

Noise Figure (db Typ @ F)

1.9dB ~ 3dB @ 2GHz ~ 4GHz

Gain

10.5dB ~ 14dB

Power - Max

600mW

Dc Current Gain (hfe) (min) @ Ic, Vce

30 @ 35mA, 8V

Current - Collector (ic) (max)

80mA

Mounting Type

Surface Mount

Package / Case

12mm x 12mm x 6mm

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

AT-42000-GP4

Manufacturer:

AVAGO/安华高

Quantity:

20 000

Current page: 1 of 5
Download datasheet (169Kb)

AT-42000

Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip

Data Sheet

Description

Avago’s AT-42000 is a general purpose NPN bipolar transis-

tor chip that offers excellent high frequency performance.

The 4 micron emitter-to-emitter pitch enables this transis-

tor to be used in many different functions. The 20 emit-

ter finger interdigitated geometry yields a medium sized

transistor with impedances that are easy to match for low

noise and medium power applications.

This device is designed for use in low noise, wideband am-

plifier, mixer and oscillator applications in the VHF, UHF,

and microwave frequencies. An optimum noise match

near 50W up to 1 GHz , makes this device easy to use as a

low noise amplifier.

The AT-42000 bipolar transistor is fabricated using Avago’s

10 GHz fT Self-Aligned-Transistor (SAT) process. The die is

nitride passivated for surface protection. Excellent device

uniformity, performance and reliability are produced by

the use of ionimplantation, self-alignment techniques,

and gold metalization in the fabrication of this device.

The recommended assembly procedure is gold-eutectic

die attach at 400oC and either wedge or ball bonding us-

ing 0.7 mil gold wire. See APPLICATIONS section, “Chip

Use”.

CAUTION: It is advised that normal static precautions be taken in handling and assembly

of this component to prevent damage and/or degradation which may be induced by ESD.

Features

• High Output Power:

• High Gain at 1 dB

• Low Noise Figure: 1.9 dB

• High Gain-Bandwidth

Chip Outline

21.0 dBm Typical P1 dB at 2.0 GHz

20.5 dBm Typical P1 dB at 4.0 GHz

Compression:

15.0 dB Typical G1 dB at 2.0 GHz

10.0 dB Typical G1 dB at 4.0 GHz

Typical NFO at 2.0 GHz

Product: 9.0 GHz Typical fT

Related parts for AT-42000-GP4

AT-42000-GP4 Summary of contents

Page 1

... See APPLICATIONS section, “Chip Use”. CAUTION advised that normal static precautions be taken in handling and assembly of this component to prevent damage and/or degradation which may be induced by ESD. Features • High Output Power: 21.0 dBm Typical 2.0 GHz 20.5 dBm Typical 4.0 GHz • ...

Page 2

... Collector-Base Voltage CBO V Collector-Emitter Voltage CEO I Collector Current C P Power Dissipation T T Junction Temperature j T Storage Temperature STG Part Number Ordering Information Part Number AT-42000-GP4 Electrical Specifications °C A Symbol Parameters and Test Conditions Insertion Power Gain; V 21E P Power Output @ 1 dB Gain Compression Compressed Gain ...

Page 3

... Figure 5. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency mA (mA) C Figure 3. Insertion Power Gain vs. Collector Current and Frequency 6.0 0.5 1.0 2.0 3.0 4.0 5.0 FREQUENCY (GHz) Figure 6. Noise Figure and Associated Gain vs. Frequency mA 1.0 GHz 2.0 GHz 4.0 GHz ...

Page 4

... AT-42000 Typical Scattering Parameters, Common Emitter Ω Freq GHz Mag. Ang. 0.1 .70 -50 0.5 .67 -136 1.0 .66 -166 1.5 .66 -173 2.0 .66 179 2.5 .67 170 3.0 .67 165 3.5 .70 157 4.0 .70 151 4.5 .71 145 5.0 .73 138 5.5 .74 132 6.0 .76 129 AT-42000 Typical Scattering Parameters, Common Emitter Ω ...

Page 5

... For product information and a complete list of distributors, please go to our web site: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright © 2008 Avago Technologies Limited. All rights reserved. Obsoletes 5965-8909E AV02-1002EN - January 16, 2008 30 µ ...

Related keywords

AT-42000-GP4 datasheet
AT-42000-GP4 data sheet
AT-42000-GP4 pdf datasheet
AT-42000-GP4 component
AT-42000-GP4 part
AT-42000-GP4 distributor
AT-42000-GP4 RoHS
AT-42000-GP4 datasheet download