NTE128-5 NTE ELECTRONICS, NTE128-5 Datasheet - Page 2

• Manufacturer Part Number: NTE128-5
• Description: RF TRANSISTOR, NPN, 500mV, 400MHZ
• Manufacturer: NTE ELECTRONICS

Specifications of NTE128-5

• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 500mV
• Transition Frequency Typ Ft: 400MHz
• Power Dissipation Pd: 800mW
• Dc Collector Current: 1A
• Dc Current Gain Hfe: 300

Electrical Characteristics: (T
Note 2. Pulse Test: Pulse Width
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics (Note 2)
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Base–Emitter ON Voltage (NTE129 Only)
NTE129
NTE129
NTE129
NTE129
NTE129
NTE129
NTE129
NTE129
NTE128
NTE128
NTE128
NTE128
NTE128
NTE128
NTE128
NTE128
Parameter
A
= +25 C unless otherwise specified)
V
V
V
300 s, Duty Cycle
Symbol
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I
I
CE(sat)
BE(sat)
BE(on)
h
CBO
EBO
FE
I
I
I
I
I
I
V
V
V
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
C
C
C
C
E
E
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
CB
CB
CB
CB
BE
BE
= 100 A, I
= 10 A
= 30mA, I
= 10mA
= 100 A, I
= 10 A
= 0.1mA, V
= 10mA, V
= 150mA, V
= 150mA, V
= 500mA, V
= 1.0A, V
= 100 A, V
= 100mA, V
= 100mA, V
= 500mA, V
= 1.0A, V
= 150mA, I
= 500mA, I
= 150mA, I
= 500mA, I
= 150mA, I
= 500mA, V
= 5V, I
= 5V
= 90V, I
= 90V, I
= 60V
= 60V, T
Test Conditions
C
CE
CE
B
E
E
E
C
A
= 0
CE
B
B
B
B
B
CE
CE
CE
CE
= 0
= 0
= 0, T
CE
CE
CE
CE
CE
1%.
= 0
= 0
= +150 C
= 10V
= 5V
= 15mA
= 50mA
= 15mA
= 50mA
= 15mA
= 10V
= 10V
= 10V, T
= 5V
= 5V, T
= 10V
= 10V
= 5V
= 5V
= 500mV
A
= +150 C
C
C
= –55 C
= –55 C
Min
140
100
100
80
80
80
50
90
40
50
15
75
40
70
25
7
5
–
–
–
–
–
–
–
–
–
–
–
–
–
Typ
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.010
Max
0.01
0.15
300
300
0.2
0.5
0.5
1.1
0.9
1.1
10
50
50
10
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Unit
nA
V
V
V
V
V
V
V
V
V
V
V
V
V
A
A
A
A
A