NTE106 NTE ELECTRONICS, NTE106 Datasheet

RF TRANSISTOR, PNP, -600mV, 1.1GHZ

NTE106

Manufacturer Part Number
NTE106
Description
RF TRANSISTOR, PNP, -600mV, 1.1GHZ
Manufacturer
NTE ELECTRONICS
Datasheet

Specifications of NTE106

Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
600mV
Transition Frequency Typ Ft
1.1GHz
Power Dissipation Pd
360mW
Dc Collector Current
200mA
Dc Current Gain Hfe
120
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (T
Total Device Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Electrical Characteristics: (T
Note 1. Pulse Test: Pulse Width
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Base Current
ON Characteristics
DC Current Gain
Derate Above 25 C
Derate Above 25 C
Parameter
EBO
CBO
A
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO
= +25 C), P
= +25 C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
C
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
Silicon PNP Transistor
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Switching Transistor
V
V
V
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol
300 s, Duty Cycle
(BR)CEO
(BR)CES
(BR)CBO
(BR)EBO
I
h
CES
I
FE
B
D
D
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE106
I
I
I
I
V
V
V
I
I
I
I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
C
C
E
C
C
C
C
CE
CE
CE
= 100 A, I
= 3mA, I
= 100 A, V
= 100 A, I
= 1mA, V
= 10mA, V
= 10mA, V
= 50mA, V
= 8V, V
= 8V, V
= 8V, V
Test Conditions
B
BE
BE
BE
CE
= 0, Note 1
C
E
CE
CE
CE
BE
= 0
= 0
= 0
= 0, T
= 0
= 500mV
2%.
= 300mV
= 300mV, T
= 1V, Note 1
= 0
A
= +125 C
A
= –55 C
Min
4.5
15
15
15
35
50
20
40
Typ
–65 to +200 C
–65 to +200 C
5.9
2.06mW/ C
6.9mW/ C
Max Unit
120
10
5
1
200mA
0.36W
1.2W
4.5V
nA
nA
15V
15V
V
V
V
V
A

Related parts for NTE106

NTE106 Summary of contents

Page 1

... Base Current ON Characteristics DC Current Gain Note 1. Pulse Test: Pulse Width NTE106 Silicon PNP Transistor Switching Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 2

Electrical Characteristics (Cont’d): (T Parameter ON Characteristics (Cont’d) Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Small–Signal Characteristics Current Gain–Bandwidth Product Output Capacitance Input Capacitance Switching Characteristics Turn–On Time Delay Time Rise Time Turn–Off Time Stoirage Time Fall Time Storage Time Note ...

Related keywords