BFS17P Infineon Technologies, BFS17P Datasheet - Page 2

• Manufacturer Part Number: BFS17P
• Description: RF TRANSISTOR, NPN, SOT-23
• Manufacturer: Infineon Technologies

Specifications of BFS17P

• Transistor Polarity: N Channel
• Collector Emitter Voltage V(br)ceo: 15V
• Gain Bandwidth Ft Typ: 2.5GHz
• Power Dissipation Pd: 280mW
• Dc Collector Current: 25mA
• Operating Temperature Range: -65°C To +150°C
• Rf: RoHS Compliant
• Dc Current Gain Hfe: 70
• Rohs Compliant: Yes
• Packages: SOT23
• Vceo (max): 15.0 V
• Ic(max): 25.0 mA
• Nfmin (typ): 3.5 dB
• Gmax (typ): -
• Oip3: 21.5 dBm

Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-base cutoff current
V
V
Emitter-base cutoff current
V
DC current gain-
I
I
Collector-emitter saturation voltage
I
C
C
C
C
CB
CB
EB
= 1 mA, I
= 2 mA, V
= 25 mA, V
= 10 mA, I
= 2.5 V, I
= 10 V, I
= 25 V, I
B
CE
B
E
E
= 0
C
CE
= 1 mA
= 0
= 0
= 0
= 1 V, pulse measured
= 1 V, pulse measured
A
= 25°C, unless otherwise specified
2
Symbol
V
I
I
h
V
CBO
EBO
FE
(BR)CEO
CEsat
min.
15
40
20
-
-
-
-
Values
typ.
0.1
70
-
-
-
-
-
max.
0.05
150
100
0.4
10
-
2005-11-17
-
BFS17P
Unit
V
µA
-
V