BFS17P Infineon Technologies, BFS17P Datasheet

RF TRANSISTOR, NPN, SOT-23

BFS17P

Manufacturer Part Number
BFS17P
Description
RF TRANSISTOR, NPN, SOT-23
Manufacturer
Infineon Technologies
Datasheet

Specifications of BFS17P

Transistor Polarity
N Channel
Collector Emitter Voltage V(br)ceo
15V
Gain Bandwidth Ft Typ
2.5GHz
Power Dissipation Pd
280mW
Dc Collector Current
25mA
Operating Temperature Range
-65°C To +150°C
Rf
RoHS Compliant
Dc Current Gain Hfe
70
Rohs Compliant
Yes
Packages
SOT23
Vceo (max)
15.0 V
Ic(max)
25.0 mA
Nfmin (typ)
3.5 dB
Gmax (typ)
-
Oip3
21.5 dBm

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BFS17P
Manufacturer:
INFINEON
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Quantity:
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Part Number:
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NPN Silicon RF Transistor
• For broadband amplifiers up to 1 GHz at
ESD ( E lectro s tatic d ischarge) sensitive device, observe handling precaution!
Type
BFS17P
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Total power dissipation
T
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1 T
2 For calculation of R
S
collector currents from 1 mA to 20 mA
S is measured on the collector lead at the soldering point to the pcb
≤ 55 °C
thJA
please refer to Application Note Thermal Resistance
1)
2)
Marking
MCs
1 = B
1
Symbol
V
V
V
I
I
P
T
T
T
Symbol
R
Pin Configuration
C
CM
CEO
CBO
EBO
tot
j
A
stg
thJS
2 = E
3
3 = C
-65 ... 150
-65 ... 150
Value
Value
≤ 340
280
150
2.5
15
25
25
50
Package
SOT23
2005-11-17
BFS17P
1
Unit
V
mA
mW
°C
Unit
K/W
2

Related parts for BFS17P

BFS17P Summary of contents

Page 1

... S is measured on the collector lead at the soldering point to the pcb 2 For calculation of R please refer to Application Note Thermal Resistance thJA Marking Pin Configuration MCs Symbol V CEO V CBO V EBO tot stg Symbol R thJS 1 BFS17P Package SOT23 Value Unit 2 280 mW 150 °C -65 ... 150 -65 ... 150 Value Unit ≤ 340 K/W 2005-11-17 ...

Page 2

... Collector-emitter breakdown voltage mA Collector-base cutoff current Emitter-base cutoff current current gain mA pulse measured mA pulse measured C CE Collector-emitter saturation voltage mA 25°C, unless otherwise specified A Symbol V (BR)CEO I CBO I EBO CEsat 2 BFS17P Values Unit min. typ. max µ 0. 100 - 40 - 150 0.1 0.4 V 2005-11-17 ...

Page 3

... Third order intercept point at output mA 800 MHz Sopt L Lopt 1dB Compression point mA 800 MHz = 25°C, unless otherwise specified A Symbol 21e = Z = 50Ω -1dB = Z = 50Ω BFS17P Values min. typ. max. 1 1.4 - 1.3 2 0.55 0 0.9 1. 2005-11-17 Unit GHz dBm - ...

Page 4

... Permissible Pulse Load R tot 105 120 150 ° Collector-base capacitance C Emitter-base capacitance MHz 1.2 pF 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0 ƒ(t thJS 3 2 0.5 0.2 0.1 0.05 0.02 0.01 0.005 ƒ( CEB CCB 2005-11-17 BFS17P ) ƒ( ...

Page 5

... Transition frequency parameter CE 3 GHz 2 1 10V 0. BFS17P 2005-11-17 ...

Page 6

... Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT23 2.9 ±0 +0.1 0.4 -0.05 C 0.95 1.9 0. Lead width can be 0.6 max. in dambar area 0.8 0.8 1.2 Manufacturer EH Date code (Year/Month) Type code Example 4 0.9 3.15 6 BFS17P 1 ±0.1 0.1 MAX 2003, July BCW66 0.2 1.15 2005-11-17 ...

Page 7

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. 7 BFS17P 2005-11-17 ...

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